MP-A1 Electron-beam fabricated GaAs FET inverter

Performance prediction for submicron GaAs SDFL logic

“…At liquid nitrogen temperature the delay time was reduced to 17.5 ps with 9.2 mW power dissipation. A 34 ps gate delay has been reported using a depletion mode BFL [ 2 ] , and binary frequency dividers have been operated at around 5 GHz [3,4] Potential superiority of GaAs logic compared to Si is partially related to a higher electron velocity, especially in short submicron devices where the transient ("overshoot" [5-71 or "near-ballistic" [8-121) effects become important. indicate that an electron velocity in excess of 3 x lo5 m/s can be achieved in a submicron GaAs device.…”

“…where QI is a numerical constant (a N l), and Veff to L e f f by veff (io5 m/s) = (.22 -t 1.39 Leff)/Leff (2) where L e f f is in microns. (2) is obtained from the computer calculation of the transit time for typical drain-to-source voltages (1-3 v> for GaAs doped at 2 x 1017 cm-3 using the phenomenological transport equations…”

“…HERE HAS BEEN considerable interest in the past decade in monolithic microwave integrated circuits [ l ] . The integration of active devices such as GaAs MESFET's and mixers has received much attention [2] , However, these circuits also require the integration of active and passive circuit elements which in many cases are the most troublesome part of the monolithic integrated circuit.…”