Performance prediction for submicron GaAs SDFL logic

Shur, M. S.; Long, David M.

doi:10.1109/edl.1982.25507

Search citation statements

Order By: Relevance

Paper Sections

Select...

Model For Field Dependence Of Hfet Noise Temperatures1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1987

1997

Publication Types

Select...

Book4

Article2

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 12 publications

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With zero magnetic field, the effective gate length L g of the JS8905-AS HFET is approximately 0.3 m, which is slightly longer than the physical gate length ͑0.25 m͒ due to fringing E-field effects at the gate edges. 9 The net effect of the applied B field is to decrease the x-directed vector velocity which will increase the effective gate length as shown in Fig. 7.…”

Section: Model For Field Dependence Of Hfet Noise Temperaturesmentioning

confidence: 98%

Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifier

Daw

Bradley

1997

Journal of Applied Physics

View full text Add to dashboard Cite

We present the results of measurements of the noise temperature of a heterostructure field-effect transistor (HFET) low-noise amplifier operating at 683 MHz in high static magnetic fields. These measurements indicate that the amplifier noise temperature increases from 4.2 K in zero field to 7.0 K at 3.6 T. The effect is highly dependent on the orientation of the amplifier with respect to the magnetic field. We propose an explanation of this effect in which the paths of the electrons in the HFET channel are altered due to the Lorentz force from the applied field, affecting the HFET transconductance. Calculations based on this model are shown to be consistent with our measurements.

show abstract

Section: Model For Field Dependence Of Hfet Noise Temperaturesmentioning

confidence: 98%