MOVPE of II–VI materials

Irvine, S.J.C.; Stafford, Anne; Ahmed, M.U.; Prete, P.; Berrigan, R.

doi:10.1016/s0960-8974(97)00031-4

Cited by 4 publications

(2 citation statements)

References 90 publications

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“…As an example, polycrystalline CdTe/CdS solar cells have achieved a very high conversion efficiency of 16% [4]. The growth techniques most used to produce CdTe thin films have been metal-organic vapour phase epitaxy, electrodeposition and closed space sublimation [5][6][7]. Independent of growth procedure, it has been shown that grain size and surface morphology are one of the most important aspects affecting the efficiency of these devices [8].…”

Section: Introductionmentioning

confidence: 99%

Roughness of CdTe thin films grown on glass by hot wall epitaxy

Leal

Ferreira

Menezes-Sobrinho

et al. 2004

J. Phys.: Condens. Matter

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Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 µm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100).

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Section: Introductionmentioning

confidence: 99%

Roughness of CdTe thin films grown on glass by hot wall epitaxy

Leal

Ferreira

Menezes-Sobrinho

et al. 2004

J. Phys.: Condens. Matter

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“…CdS thin films have been extensively explored for their optoelectronic properties, and various nanostructures such as thin films [ 17 ], nanowires [ 18 ], nanobelts [ 19 ], and nanoribbons [ 20 ] have been developed to improve their photodetector performance. Various fabrication methods such as sputtering [ 21 ], vacuum evaporation [ 22 ], electrodeposition [ 23 ], chemical bath deposition [ 24 , 25 , 26 ], spray pyrolysis [ 27 , 28 ], chemical vapor deposition [ 29 ], metalorganic chemical vapor deposition (MOCVD) [ 30 ], and pulsed laser deposition (PLD) [ 31 , 32 , 33 ] have been employed to produce high-quality CdS thin films. In recent years, the PLD technique has garnered significant attention for delivering sophisticated, high-quality compound semiconductor thin and ultrathin films and embedding nanoparticles (NPs).…”

Section: Introductionmentioning

confidence: 99%

Utilizing Gold Nanoparticle Decoration for Enhanced UV Photodetection in CdS Thin Films Fabricated by Pulsed Laser Deposition: Exploiting Plasmon-Induced Effects

Belaid,

Gezgin,

Basyooni-M. Kabatas

et al. 2024

Nanomaterials

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UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this challenge by investigating the photodetection properties of CdS thin films and the influence of surface-deposited gold nanoparticles (AuNPs) on their performance. CdS thin films were produced using the pulsed laser deposition (PLD) technique on glass substrates, with CdS layers at a 100, 150, and 200 nm thickness. Extensive characterization was performed to evaluate the thin films’ structural, morphological, and optical properties. Photodetector devices based on CdS and AuNPs/CdS films were fabricated, and their performance parameters were evaluated under 365 nm light illumination. Our findings demonstrated that reducing CdS layer thickness enhanced performance concerning detectivity, responsivity, external quantum efficiency (EQE), and photocurrent gain. Furthermore, AuNP deposition on the surface of CdS films exhibited a substantial influence, especially on devices with thinner CdS layers. Among the configurations, AuNPs/CdS(100 nm) demonstrated the highest values in all evaluated parameters, including detectivity (1.1×1012 Jones), responsivity (13.86 A/W), EQE (47.2%), and photocurrent gain (9.2).

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