MOVPE growth of lattice matched InAs/GaAsSb superlattice on InAs substrate for mid-infrared sensing devices

Takahashi, Keitaro; Fujiwara, Yuki; Yamagata, Yuya; Yoshimoto, Keita; Inoue, Yuki; Wakaki, Ryosuke; Maeda, Koji; Arai, M.

doi:10.23919/moc.2017.8244605

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2018

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“…In addition, we evaluated the optical characteristics of lattice-matched InAs=GaAsSb superlattices by varying the period of film thickness for high-performance light sources and photodiodes. Compared with our previous report, 31) several experimental data values are presented in this report to determine the amounts of arsenic and antimony incorporation.…”

Section: Introductionmentioning

confidence: 97%

GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device

Arai

Takahashi

Yamagata

et al. 2018

Jpn. J. Appl. Phys.

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We investigated the gas flow sequence to realize a short-period and lattice-matched InAs/GaAsSb superlattice on an InAs substrate by metalorganic vapor phase epitaxy (MOVPE) growth for applications in mid-infrared photonic devices. The arsenic composition of GaAsSb for lattice matching was adjusted by adding AsH 3 flow to residual arsenic incorporation. The growth conditions for lattice-matched superlattices at a period of 5 nm were found. The superlattices with period thicknesses of 1 to 9 nm were successfully confirmed by the photoluminescence (PL) peak in the range from 2.4 to 5 µm depending on layer thickness at 20 K. The emission wavelength can be controlled by changing the layer thickness of superlattices. The results led to the improvement of InAs/GaAsSb type II superlattice growth.

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Section: Introductionmentioning

confidence: 97%