GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device

Abstract

We investigated the gas flow sequence to realize a short-period and lattice-matched InAs/GaAsSb superlattice on an InAs substrate by metalorganic vapor phase epitaxy (MOVPE) growth for applications in mid-infrared photonic devices. The arsenic composition of GaAsSb for lattice matching was adjusted by adding AsH 3 flow to residual arsenic incorporation. The growth conditions for lattice-matched superlattices at a period of 5 nm were found. The superlattices with period thicknesses of 1 to 9 nm were successfully confirmed by the photoluminescence (PL) peak in the range from 2.4 to 5 µm depending on layer thickness at 20 K. The emission wavelength can be controlled by changing the layer thickness of superlattices. The results led to the improvement of InAs/GaAsSb type II superlattice growth.

GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth

“…The III-group metal-organic source used was triethylgallium (TEGa), while the V-group sources consisted of arsine (AsH 3 ) and triethylantimony (TESb). 15) We introduced tert-butylphosphine (TBP) to protect the InP surface before growth when the susceptor temperature exceeded 300 °C after a 30 min annealing period in an H 2 atmosphere. 16) The growth temperature was set at 500 °C to facilitate heavy doping with carbon using tetrabromide (CBr 4 ).…”