MOVPE growth of GaN around ZnO nanopillars

Thapa, S.B.; Hertkorn, J.; Wunderer, Thomas; Lipski, Frank; Scholz, F.; Reiser, A.; Xie, Yong; Feneberg, Martin; Thonke, Klaus; Sauer, R.; Dürrschnabel, Michael; Yao, Lei; Gerthsen, D.; Hochmuth, H.; Lorenz, Michael; Grundmann, Marius

doi:10.1016/j.jcrysgro.2008.07.009

Cited by 13 publications

(13 citation statements)

References 9 publications

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“…In between these layers, different annealing steps were performed, while the pressure was kept constant at 100 mbar during the complete MOVPE process [7].…”

Section: Methodsmentioning

confidence: 99%

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Studies towards freestanding GaN in hydride vapor phase epitaxy by in‐situ etching of a sacrificial ZnO buffer layer

Lipskil

Thapa

Hertkorn

et al. 2009

Phys. Status Solidi (c)

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By in‐situ etching of a ZnO buffer layer freestanding GaN layers were prepared by hydride vapor phase epitaxy (HVPE). For the template growth, single crystalline ZnO buffer layers, grown by pulsed laser deposition on sapphire, were used. They were overgrown with a thin GaN layer by a multilayer growth using metal organic vapor phase epitaxy (MOVPE). The removal of the ZnO buffer during the HVPE growth allowed the fabrication of strain‐free freestanding GaNlayers with a full width‐half‐maximum of the donor bound exciton (D0X) of 2.3 meV at a position of 3.47 eV in low temperature (15 K) photoluminescence (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In between these layers, different annealing steps were performed, while the pressure was kept constant at 100 mbar during the complete MOVPE process [7].…”

Section: Methodsmentioning

confidence: 99%

“…The two peaks related to ZnO and GaN can be clearly distinguished, confirming the well-ordered c-plane crystalline growth of the GaN layer on the ZnO film. More details can be found elsewhere [7,10].…”

mentioning

confidence: 99%

Studies towards freestanding GaN in hydride vapor phase epitaxy by in‐situ etching of a sacrificial ZnO buffer layer

Lipskil

Thapa

Hertkorn

et al. 2009

Phys. Status Solidi (c)

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“…A major issue for the hetero‐epitaxial growth of GaN on ZnO using MOVPE is the high sensitivity of ZnO in the GaN growth environment: At elevated temperatures, ZnO decomposes by reacting with hydrogen and ammonia. Therefore, we have established a multi‐layer growth process based on our experience in the growth of GaN layers on ZnO templates by MOVPE 5. In order to protect the ZnO from being etched at the onset of the growth process, the nanorods were first covered by GaN at 550 °C using N 2 as a carrier gas.…”

Section: Gan Layers Around Zno Nanopillarsmentioning

confidence: 99%

Luminescence properties of epitaxially grown GaN and InGaN layers around ZnO nanopillars

Fikry

Madel

Tischer

et al. 2011

Physica Status Solidi (a)

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GaN and InGaN layers grown around ZnO nanopillars by metalorganic vapour phase epitaxy (MOVPE) are investigated by means of photoluminescence (PL) and locally resolved cathodoluminescence (CL). A multi layer growth process involving deposition at different growth conditions in a stepwise manner has been employed for the coaxially grown GaN. Then InGaN/GaN quantum wells and barriers have been deposited as the final growth stage. A sharp peak at 3.46 eV in low temperature PL with FWHM of 23 meV confirmed the high quality of the deposited GaN layers. The existence of InGaN layers has been confirmed by another PL peak at 3.16 eV that has been shifted to 3.11 eV as the InGaN deposition temperature was reduced by 15 8C and the trimethylindium (TMIn) flow was increased by 40 sccm. For more efficient investigations of single pillars, position control has been achieved through the growth of single ZnO nanopillars on top of GaN pyramids. Locally resolved CL mapping along single rods has revealed a relatively homogeneous indium distribution along the nonpolar side facets of the overgrown nanopillars.

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“…Following our experience for the growth of GaN layers on ZnO templates [4], the growth was started with a low temperature covering layer of GaN grown at 550 o C using N 2 as carrier gas to protect ZnO from being etched at the onset of the growth process. Then, the temperature was raised to 800 o C, still using N 2 as a carrier gas.…”

Section: Zno-gan Coaxial Nanorodsmentioning

confidence: 99%

“…Therefore, we have established a multi-layer growth process (MGP) based on our experience about the growth of GaN layers on ZnO templates by metalorganic vapor phase epitaxy (MOVPE) [4]. However, even then the ZnO may easily dissolve leaving GaN nanotubes on the wafer [5].…”

Section: Introductionmentioning

confidence: 99%