MOVPE growth of Ga 3D structures for fabrication of GaN materials

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

“…The growth preliminary mechanism model can be assimilated to the VLS published one, in which metallic elements are present at the substrate surface to build the rod structure [13][14][15]. The metal-organic molecule interaction with other substrate surfaces seems to be a general and natural behavior to produce 3D structures [11]. These 3D microstructures can eventually be utilized in future micro/nanometer material/devices development, e.g.…”

“…We just used the conventional MOCVD facilities for the growth of semiconducting wire-like materials. The use of MO multiple sources can eventually be used for III-V bandgap engineering and selectively wiring circuit [11,16].…”

“…Such a carbon coating has already been detected on more stable substrates as Si, Al 2 O 3 , quartz, for the growth of gallium balls [11].…”

“…For a future growth model development, TMGa radicals from the vapor phase plus In and P should come from the bottom (substrate), building the trunk (rod, composed of Ga, In and P elements) with Ga as well In being food to the ball [11]. Capillary action as the filling mechanism has also been proposed [14].…”

Optical and structural studies of GaN 3D structures selectively grown by MOCVD

“…In order to do so, optical microscopy (OM), scanning electron microscopy (SEM), cathodoluminescence (CL), twophoton excitation (2PH), and fluorescence (FL) techniques are employed in order to characterize these 3D structures. The 3D structure chemical composition and crystallographic analysis have already been previously reported [10,11]. The room temperature (RT) 2PH and FL experimental details are described elsewhere and are performed under optical microscopic conditions [4,[11][12][13][14][15].…”