2003
DOI: 10.1016/s0022-0248(02)01870-5
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MOVPE growth of BxGa1−xAs, BxGa1−x−yInyAs, and BxAl1−xAs alloys on (001) GaAs

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Cited by 61 publications
(39 citation statements)
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“…However, we find a very good agreement of the calculated gap of 1.36 eV (cluster) and 1.37eV (isolated atoms) for B 1 In 2 Ga 29 As 32 and the experimental value of 1.36 eV for B 0.027 In 0.06 Ga 0.91 As [9] but also of 1.34-1.36 eV for B 0.015 In 0.033 Ga 0.465 As 0.488 [6]. …”
Section: (Binga)assupporting
confidence: 81%
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“…However, we find a very good agreement of the calculated gap of 1.36 eV (cluster) and 1.37eV (isolated atoms) for B 1 In 2 Ga 29 As 32 and the experimental value of 1.36 eV for B 0.027 In 0.06 Ga 0.91 As [9] but also of 1.34-1.36 eV for B 0.015 In 0.033 Ga 0.465 As 0.488 [6]. …”
Section: (Binga)assupporting
confidence: 81%
“…Shan et al [7] also find a small increase of the band gap of BGaAs (14 meV) with boron content up to 3%. Gottschalch et al [8][9][10] obtain a weak band gap increase for BGaAs and a band gap reduction for BInGaAs with boron incorporation. A band gap energy of 1.36 eV is measured for B 0.027 In 0.06 Ga 0.913 As.…”
Section: Introductionmentioning
confidence: 99%
“…The isolated B state is calculated to be only about 250 meV above the CB edge and the B cluster-state distribution extends to energies even below the band gap. However, the B-induced fluctuations in the CB are much weaker than in (Ga,In)(N,As), as manifested by the weak dependence of E g on boron concentration in experiment and theory [1]. In the framework of weak Anderson localization, the smaller dE g /dx of (B,Ga,In)As leads to less pronounced negative MR effects when compared to (Ga,In)(N,As), as observed in Fig.…”
Section: Resultsmentioning
confidence: 93%
“…B seems to have much less influence on the CB-structure of these two hosts compared to N, e.g. no reduction of the band gap was found [1], although a significant increase of electron effective mass was observed [2]. We will show that despite the difference in band-structure modification due to B and N, magneto-resistance (MR) measurements on (B,Ga,In)As and (Ga,In)(N,As) show surprisingly many similarities.…”
Section: Introductionmentioning
confidence: 89%
“…Tixier et al [2] have reported band gaps of dilute quaternary alloys GaN x As 1−x−y Bi y (x < 1.6%, y < 2.6%) lattice matched to GaAs at room temperature by MBE. Gottschalch [3] observed a small influence of the boron concentration on the band gap energies by the help of MOVPE growth of B x Ga 1−x As, B x Ga 1−x−y In y As and B x Al 1−x As alloys on (001) GaAs substrate.…”
Section: Introductionmentioning
confidence: 99%