MOVPE growth of BxGa1−xAs, BxGa1−x−yInyAs, and BxAl1−xAs alloys on (001) GaAs

Gottschalch, V.; Leibiger, G.; Benndorf, G.

doi:10.1016/s0022-0248(02)01870-5

Cited by 61 publications

(39 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, we find a very good agreement of the calculated gap of 1.36 eV (cluster) and 1.37eV (isolated atoms) for B 1 In 2 Ga 29 As 32 and the experimental value of 1.36 eV for B 0.027 In 0.06 Ga 0.91 As [9] but also of 1.34-1.36 eV for B 0.015 In 0.033 Ga 0.465 As 0.488 [6]. …”

Section: (Binga)assupporting

confidence: 81%

See 1 more Smart Citation

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density‐functional supercell calculations

Jenichen¹,

Engler²

2007

Physica Status Solidi (b)

View full text Add to dashboard Cite

The influence of arrangement and content of substituents (B, In) in BGaAs, InGaAs, and BInGaAs alloys on the stabilities and band gaps is investigated using density-functional supercell calculations. The stability of ternary alloys decreases from InGaAs over BGaAs to GaAsN. Typical substituent structures show the following stability order: isolated substituents -[110] chains -clusters -twisted [111] chains -(200/211) arrangements (most stable). This is valid for both the In-and B-poor as well as the In-and B-rich alloys. From the fact that grown InGaAs provides a different gap than the most stable arrangement one can conclude that other structures (isolated indium atoms or In m As clusters) are formed during the growth. Simultaneous substitutions (BInGaAs) of larger (In) and smaller (B) atoms prefer arrangements in larger distances (220) for isovalent boron substitution and in In -B bonds for antisite boron substitution. The high degree boron antisite substitution induces partially occupied acceptor bands which lead to a strong reduction of the band gap in comparison to the isovalent substitution.

show abstract

Section: (Binga)assupporting

confidence: 81%

“…Shan et al [7] also find a small increase of the band gap of BGaAs (14 meV) with boron content up to 3%. Gottschalch et al [8][9][10] obtain a weak band gap increase for BGaAs and a band gap reduction for BInGaAs with boron incorporation. A band gap energy of 1.36 eV is measured for B 0.027 In 0.06 Ga 0.913 As.…”

Section: Introductionmentioning

confidence: 99%

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density‐functional supercell calculations

Jenichen¹,

Engler²

2007

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The isolated B state is calculated to be only about 250 meV above the CB edge and the B cluster-state distribution extends to energies even below the band gap. However, the B-induced fluctuations in the CB are much weaker than in (Ga,In)(N,As), as manifested by the weak dependence of E g on boron concentration in experiment and theory [1]. In the framework of weak Anderson localization, the smaller dE g /dx of (B,Ga,In)As leads to less pronounced negative MR effects when compared to (Ga,In)(N,As), as observed in Fig.…”

Section: Resultsmentioning

confidence: 93%

“…B seems to have much less influence on the CB-structure of these two hosts compared to N, e.g. no reduction of the band gap was found [1], although a significant increase of electron effective mass was observed [2]. We will show that despite the difference in band-structure modification due to B and N, magneto-resistance (MR) measurements on (B,Ga,In)As and (Ga,In)(N,As) show surprisingly many similarities.…”

Section: Introductionmentioning

confidence: 89%

Effect of localized B and N states on the magneto‐transport of (B,Ga,In)As and (Ga,In)(N,As)

Teubert

Klar

Heimbrodt

et al. 2006

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

(N,As) were studied in the temperature range from 2 to 300 K and in magnetic fields up to 10 T and at hydrostatic pressures up to 16 kbar. The magneto-transport in (B,Ga,In)As and (Ga,In)(N,As) is very similar. P-type samples show normal semiconductor behaviour whereas the electron transport in both alloys is strongly affected by the interaction of the free carriers with the density of states of localized B and N impurity states, respectively.

show abstract

“…Tixier et al [2] have reported band gaps of dilute quaternary alloys GaN x As 1−x−y Bi y (x < 1.6%, y < 2.6%) lattice matched to GaAs at room temperature by MBE. Gottschalch [3] observed a small influence of the boron concentration on the band gap energies by the help of MOVPE growth of B x Ga 1−x As, B x Ga 1−x−y In y As and B x Al 1−x As alloys on (001) GaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

Band Gap Characterization of Ternary BBi_1-xN_xAlloys: A First-Principles Study

Yalcin

2015

Acta Phys. Pol. A

View full text Add to dashboard Cite

III-V based alloys and heterostructures have got much attention due to their great device applications as well as for the development of electronic, optic and optoelectronic devices. Because of this reason, the present study reports an investigation about the band gap properties of BBi1−xNx (0 ≤ x ≤ 1) ternary alloy in zinc-blende phase. The results of studied binary (BN and BBi) and ternary BBi1−xNx alloy structures are presented by means of density functional theory within the Wu-Cohen exchange correlation potential based on generalized gradient approximation. We have implemented geometric optimization before the volume optimization calculations for all studied alloys structure. The obtained equilibrium lattice constants of studied binary compounds are in coincidence with experimental works. The band gap character (direct/indirect or negative) of ternary BBi1−xNx alloys is also investigated.

show abstract

MOVPE growth of BxGa1−xAs, BxGa1−x−yInyAs, and BxAl1−xAs alloys on (001) GaAs

Cited by 61 publications

References 10 publications

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density‐functional supercell calculations

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density‐functional supercell calculations

Effect of localized B and N states on the magneto‐transport of (B,Ga,In)As and (Ga,In)(N,As)

Band Gap Characterization of Ternary BBi_1-xN_xAlloys: A First-Principles Study

Contact Info

Product

Resources

About

MOVPE growth of BxGa1−xAs, BxGa1−x−yInyAs, and BxAl1−xAs alloys on (001) GaAs

Cited by 61 publications

References 10 publications

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density‐functional supercell calculations

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density‐functional supercell calculations

Effect of localized B and N states on the magneto‐transport of (B,Ga,In)As and (Ga,In)(N,As)

Band Gap Characterization of Ternary BBi1-xNxAlloys: A First-Principles Study

Contact Info

Product

Resources

About

Band Gap Characterization of Ternary BBi_1-xN_xAlloys: A First-Principles Study