(N,As) were studied in the temperature range from 2 to 300 K and in magnetic fields up to 10 T and at hydrostatic pressures up to 16 kbar. The magneto-transport in (B,Ga,In)As and (Ga,In)(N,As) is very similar. P-type samples show normal semiconductor behaviour whereas the electron transport in both alloys is strongly affected by the interaction of the free carriers with the density of states of localized B and N impurity states, respectively.