MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO2 substrates

Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates

“…In addition, the crystalline quality of these nonpolar m-plane GaN lms is much higher than that grown on LiAlO 2 (100) substrates by MOCVD, due to the larger lattice and thermal expansion mismatches between m-plane GaN and LiAlO 2 (100) substrates when compared with that between m-plane GaN and LiGaO 2 (100) substrates. 35,36 HRTEM is employed to further study the structural properties of as-grown InGaN/GaN MQWs. It can be noticed that abrupt InGaN/GaN interfaces with good MQWs periodicity are obtained, as shown in Fig.…”

Epitaxial growth of GaN films on unconventional oxide substrates

“…17 Secondly, the thermal expansion coefficient of LiAlO 2 is 7.1 Â 10 À6 K À1 , 17 which matches well with that of GaN (5.59 Â 10 À6 This journal is © The Royal Society of Chemistry 2014 K À1 ). Thirdly, LiAlO 2 also is a perfect candidate for the epitaxial growth of nonpolar m-plane GaN with a small lattice mismatch of 1.7%, 77 as illustrated in Fig. 16.…”

“…Researchers prepared InGaN/GaN MQWs on LiAlO 2 . [82][83][84][85] It is found that surface segregation of In and compositional uctuations in mplane MQWs on LiAlO 2 lead to a redshi of the PL spectrum. 82 Furthermore, a comparative study reveals that optical polarization anisotropy in both m-plane and c-plane InGaN/GaN MQWs on LiAlO 2 is weakened but does not vanish.…”

“…82 Furthermore, a comparative study reveals that optical polarization anisotropy in both m-plane and c-plane InGaN/GaN MQWs on LiAlO 2 is weakened but does not vanish. 83 It shall be noted that In concentration has a signicant impact on the properties of MQWs. Mauder et al reported that the PL peak wavelength for m-plane InGaN/GaN MQWs with different In concentrations grown on fully strained GaN/LiAlO 2 , is stable at higher excitation intensity, as shown in Figs.…”

A Review on Low-Dimensional Nanomaterials: Nanofabrication, Characterization and Applications

“…Due to the large mismatch in thermal expansion coefficient and lattice constants, dislocation occurs easily in this growth mode [ 218 ]. As bringing down dislocation density is important for the device performance, many strategies were proposed, such as the epitaxial lateral overgrowth (ELO) process and adoption of alternative substrates [ 219 , 220 , 221 ]. This kind of obstacle can be overcome by the use of one-dimensional semiconductor nanorods or nanorod-films [ 222 ].…”