MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate

Sugiyama, Hirokazu; Uchida, K.; Han, Xu; Periyanayagam, Gandhi Kallarasan; Aikawa, Masaki; Hayasaka, Natsuki; Shimomura, Koichiro

doi:10.1016/j.jcrysgro.2018.10.024

Cited by 13 publications

(8 citation statements)

References 14 publications

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“…The first demonstration of regrowth of III–V active materials onto InP bonded to Si was done in 2003 by metal‐organic vapor phase epitaxy (MOVPE) . Until then, epitaxial growth of more complex active structures such as AlGaInAs or GaInAsP multiquantum wells (MQW) has been achieved. Recently, new silicon photonic devices based on lateral injection collection scheme have demonstrated impressive device characteristics .…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Besançon

Vaissière

Dupré

et al. 2019

Physica Status Solidi (a)

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Hybrid integration of III-V materials onto silicon by wafer bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform (SPP). Epitaxial regrowth of III-V materials on InP thin seed layer bonded to an oxidized silicon wafer has shown its potential to extend the III-V mature multiregrowth technologies into the SPP. In the approach, an epitaxial InP layer grown on a 4 in. InP wafer is directly bonded onto a SiO 2 /Si 200 mm wafer. After InP substrate removal, the new template (InPoSi) is evaluated for epitaxial regrowth: an eight periods strain-compensated AlGaInAs multiquantum wells (MQW) heterostructure surrounded by two InP cladding layers is grown by metal-organic vapor phase epitaxy (MOVPE) simultaneously on the InPoSi substrate and on an InP substrate as a reference. For the first time, in situ reflectance and curvature measurements are carried out on InPoSi, enabling the assessment of surface roughness and thermal strain of the III-V materials during growth. High material quality is obtained as attested by X-ray diffraction, photoluminescence, atomic force microscopy, and transmission electron microscopy.

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Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Besançon

Vaissière

Dupré

et al. 2019

Physica Status Solidi (a)

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“…Finally, an i-GaInAs layer with a thickness of 200 nm was grown to protect the surface of the InP template. [11][12][13] After thin InP templates were grown, they were used in the fabrication of the InP/Si and InP/SiO 2 /Si substrates. Herein, mainly the fabrication process for LDs on InP/SiO 2 /Si substrates is described.…”

Section: Methodsmentioning

confidence: 99%

“…Finally, an i‐GaInAs layer with a thickness of 200 nm was grown to protect the surface of the InP template. [ 11-13 ]…”

Section: Methodsmentioning

confidence: 99%

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO₂/Si Substrate

Han

Tsushima

Shirai

et al. 2021

Physica Status Solidi (a)

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The lasing characteristics of separate-confinement-heterostructure multi-quantum-well (SCH-MQW) laser diodes (LDs) grown on InP templates bonded to a SiO 2 /Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven-quantum-well-structured LD are grown by low-pressure metal-organic vapor-phase epitaxy. After the pulsed power supply of a high-mesa waveguide is tested with a surface electrode structure, the LD grown on an InP/ SiO 2 /Si substrate is found to exhibit superior lasing characteristics compared to an LD grown on an InP/Si substrate, and the threshold current density is equivalent to that of a surface-electrode-structured LD grown on an InP substrate. The slope efficiency of the LD grown on the InP/SiO 2 /Si substrate is compared with that of an LD grown on an InP/Si substrate.

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“…Coincidentally, the advanced heterogeneous integration of epitaxial regrowth of III-V onto III-V-on-Si bonded substrate has been reported from several other research groups while they mainly focus on conventional vertical p-i-n-type of diode lasers on silicon. A research group form Sophia University has demonstrated a double heterostructure (DH) laser 23−25 and a multiquantum well (MQW) laser 26,27 on Si substrate with this combined approach. We have studied the quality of regrowth material extensively and demonstrated Fabry-Perot (FP) lasers on SOI substrate with light easily coupled to Si waveguides 28−30 .…”

Section: Introductionmentioning

confidence: 99%

An advanced III-V-on-silicon photonic integration platform

Hu¹,

Liang²,

Beausoleil³

2021

OEA

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In many application scenarios, silicon (Si) photonics favors the integration of III-V gain material onto Si substrate to realize the on-chip light source. In addition to the current popular integration approaches of III-V-on-Si wafer bonding or direct heteroepitaxial growth, a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests. High-quality III-V material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost, high-integration density and highly scalable active-passive photonic integration on Si. This paper reviews recent research work on this regrowth on bonded template platform including template developments, regrown material characterizations and laser demonstrations. The potential advantages, opportunities and challenges of this approach are discussed.

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MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate

Cited by 13 publications

References 14 publications

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO₂/Si Substrate

An advanced III-V-on-silicon photonic integration platform

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MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate

Cited by 13 publications

References 14 publications

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO2/Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO2/Si Substrate

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO2/Si Substrate

An advanced III-V-on-silicon photonic integration platform

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Product

Resources

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Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO₂/Si Substrate