Mott Relation for Anomalous Hall and Nernst Effects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Mn</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi>As</mml:mi></mml:math>Ferromagnetic Semiconductors

Pu, Yong; Chiba, Daichi; Matsukura, F.; Ohno, Hideo; Shi, Jing

doi:10.1103/physrevlett.101.117208

Cited by 227 publications

(163 citation statements)

References 18 publications

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“…Calculations in the disorder-free case successfully predict the qualitative features of the AHE (the sign and rough magnitude of σ xy ) in different III-V DMS materials. As mentioned earlier, recent experiments [11,13] carried out at high temperatures (T ∼ 10−15 K) have been interpreted using this picture of an intrinsic AHE in Ga 1−x Mn x As, albeit with the idealized assumption that compensation is absent. In our sample set, we estimate p to be in the range of 10-60% of the total Mn dopant concentration, indicating a high degree of compensation due to the presence of interstitials.…”

Section: Scaling Analysis Of the Anomalous Hall Effect At Low Temperamentioning

confidence: 99%

“…Our study is restricted to samples whose resistivity lies in a regime 2 mΩ.cm < ∼ ρ xx < ∼ 10 mΩ.cm where other studies [11,13] have observed an AHE scaling exponent α = 2 at T ≥ 4.2 K. These observations have been interpreted as an insensitivity to disorder and thus as a signature of the intrinsic mechanism [11], in agreement with theoretical predictions made in the disorder-free limit [9]. However, we argue that unlike metallic ferromagnets where the Drude approximation works well at helium temperatures, the complex non-monotonic temperature dependence of the resistivity in Ga 1−x Mn x As provides strong motivation for systematic measurements at lower (dilution fridge) temperatures where impurity scattering is dominant.…”

Section: Introductionmentioning

confidence: 99%

“…The phenomenon first attracted attention several decades ago [1][2][3][4] and still continues as an active area for theoretical [5][6][7][8][9][10] and experimental [10][11][12][13][14][15] inquiry. Calculations have identified two classes of underlying mechanisms for the AHE: "extrinsic" contributions originating from the spin-dependent scattering of carriers by impurities [2,4] and "intrinsic" ones that involve the interaction of carrier spins with the inherent crystal band structure [1,16].…”

Section: Introductionmentioning

confidence: 99%

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Localization and the anomalous Hall effect in a dirty metallic ferromagnet

2010

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We report magnetoresistance measurements over an extensive temperature range (0.1 K ≤ T ≤ 100 K) in a disordered ferromagnetic semiconductor (Ga1−xMnxAs). The study focuses on a series of metallic Ga1−xMnxAs epilayers that lie in the vicinity of the metal-insulator transition (kF le ∼ 1). At low temperatures (T < 4 K), we first confirm the results of earlier studies that the longitudinal conductivity shows a T 1/3 dependence, consistent with quantum corrections from carrier localization in a "dirty" metal. In addition, we find that the anomalous Hall conductivity exhibits universal behavior in this temperature range, with no pronounced quantum corrections. We argue that observed scaling relationship between the low temperature longitudinal and transverse resistivity, taken in conjunction with the absence of quantum corrections to the anomalous Hall conductivity, is consistent with the side-jump mechanism for the anomalous Hall effect. In contrast, at high temperatures (T > ∼ 4 K), neither the longitudinal nor the anomalous Hall conductivity exhibit universal behavior, indicating the dominance of inelastic scattering contributions down to liquid helium temperatures.

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Section: Scaling Analysis Of the Anomalous Hall Effect At Low Temperamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Localization and the anomalous Hall effect in a dirty metallic ferromagnet

2010

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“…This trend has also triggered renewed interest in the anomalous Nernst effect (ANE) in ferromagnetic metals [3][4][5][6][7]15 , which is the spontaneous transverse voltage drop induced by heat current and is known to be proportional to magnetization (Fig. 1a).…”

mentioning

confidence: 99%

“…This anomalous Nernst e ect has been considered to be proportional to the magnetization [1][2][3][4][5][6][7] , and thus observed only in ferromagnets. Theoretically, however, the anomalous Nernst e ect provides a measure of the Berry curvature at the Fermi energy 8,9 , and so may be seen in magnets with no net magnetization.…”

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confidence: 99%

Large anomalous Nernst effect at room temperature in a chiral antiferromagnet

et al. 2017

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A temperature gradient in a ferromagnetic conductor can generate a transverse voltage drop perpendicular to both the magnetization and heat current. This anomalous Nernst e ect has been considered to be proportional to the magnetization 1-7 , and thus observed only in ferromagnets. Theoretically, however, the anomalous Nernst e ect provides a measure of the Berry curvature at the Fermi energy 8,9 , and so may be seen in magnets with no net magnetization. Here, we report the observation of a large anomalous Nernst e ect in the chiral antiferromagnet Mn 3 Sn (ref. 10). Despite a very small magnetization ∼0.002 µ B per Mn, the transverse Seebeck coe cient at zero magnetic field is ∼0.35 µV K −1 at room temperature and reaches ∼0.6 µV K −1 at 200 K, which is comparable to the maximum value known for a ferromagnetic metal. Our first-principles calculations reveal that this arises from a significantly enhanced Berry curvature associated with Weyl points near the Fermi energy 11 . As this e ect is geometrically convenient for thermoelectric power generation-it enables a lateral configuration of modules to cover a heat source 6 -these observations suggest that a new class of thermoelectric materials could be developed that exploit topological magnets to fabricate e cient, densely integrated thermopiles.Current intensive studies on thermally induced electron transport in ferromagnetic materials have opened various avenues for research on thermoelectricity and its application [12][13][14][15] . This trend has also triggered renewed interest in the anomalous Nernst effect (ANE) in ferromagnetic metals [3][4][5][6][7]15 , which is the spontaneous transverse voltage drop induced by heat current and is known to be proportional to magnetization (Fig. 1a). On the other hand, the recent Berry phase formulation of the transport properties has led to the discovery that a large anomalous Hall effect (AHE) may arise not only in ferromagnets, but in antiferromagnets and spin liquids, in which the magnetization is vanishingly small 10, [16][17][18][19][20][21][22] . As the first case in antiferromagnets, Mn 3 Sn has been experimentally found to exhibit a large AHE 10 . While the AHE is obtained by an integration of the Berry curvature for all of the occupied bands, the ANE is determined by the Berry curvature at E F (refs 8,9). Thus, the observation of a large AHE does not guarantee the observation of a large ANE. Furthermore, the ANE measurement should be highly useful to clarify the Berry curvature spectra near E F and to verify the possibility of the Weyl metal recently proposed for Mn 3 Sn (ref. 11).Mn 3 Sn has a hexagonal crystal structure with a space group of P6 3 /mmc (ref. 23). Mn atoms form a breathing type of kagome lattice in the ab-plane (Fig. 1b), and the Mn triangles constituting the kagome lattice are stacked on top along the c axis forming a tube of face-sharing octahedra. On cooling below the Néel temperature of 430 K, Mn magnetic moments of ∼3µ B lying in the ab-plane form a coplanar, chiral magnetic structure chara...

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Thermal and Thermoelectric Properties of Cluster‐based Materials

Sun

Jena

2021

Superatoms

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Mott Relation for Anomalous Hall and Nernst Effects inGa1−xMnxAsFerromagnetic Semiconductors

Cited by 227 publications

References 18 publications

Localization and the anomalous Hall effect in a dirty metallic ferromagnet

Localization and the anomalous Hall effect in a dirty metallic ferromagnet

Large anomalous Nernst effect at room temperature in a chiral antiferromagnet

Thermal and Thermoelectric Properties of Cluster‐based Materials

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