Motion of a planar domain wall in the ferroelectric-ferroelastic gadolinium molybdate

Shur, V. Ya.; Rumyantsev, E. L.; Kuminov, V. P.; Subbotin, A. L.; Николаева, Е. В.

doi:10.1134/1.1130739

Cited by 7 publications

(4 citation statements)

References 7 publications

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“…After external field switch-off the action of E rd + E b leads to return of the domain wall to the initial state ("complete backswitching"). The experimentally obtained field dependence of the wall shift measured during step-by-step increase of E ex amplitude is fairly well described by Equation 4 [36].…”

Section: Materials and Experimental Conditionssupporting

confidence: 49%

“…In this case E b is codirectional with E rd in the switched area. The total field at the wall averaged over the sample thickness E loc coincides with the field produced by a stripe capacitor with the width equal to the wall shift x and the surface charge determined by the doubled bulk screening charge density 2σ b [34][35][36] …”

Section: Materials and Experimental Conditionsmentioning

confidence: 99%

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Kinetics of ferroelectric domains: Application of general approach to LiNbO3 and LiTaO3

Shur¹

Frontiers of Ferroelectricity

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We review the most interesting aspects of the domain structure kinetics in ferroelectrics important for "domain engineering" and discuss them in the framework of a unified nucleation approach. In our approach the nucleation rate is determined by the local value of electric field produced not only by bound charges and voltage applied to the electrodes, but also by screening charges. As a result, any kinetically produced domain pattern, even being far from the equilibrium, can be stabilized by bulk screening. The domain evolution represents a self-organizing process in which the screening of polarization plays the role of feedback. The general approach was applied for the description of the domain kinetics in lithium niobate and lithium tantalate as the most versatile materials for applications. The revealed original scenarios of the domain structure evolution are attributed to the retardation of the screening processes. The decisive role of screening effectiveness for shapes of individual domains and scenarios of the sideways domain wall motion is demonstrated both experimentally and by computer simulation. The possibility to produce a self-assembled nano-scale domain structures with controlled periods has been shown. C 2006 Springer Science + Business Media, Inc. IntroductionA new branch of science and technology directed to the creation of periodic and quasi-periodic domain structures with desired parameters in commercially available ferroelectrics denoted as "domain engineering" is rapidly developing nowadays. Domain engineering in ferroelectric crystals, such as lithium niobate LiNbO 3 (LN) and lithium tantalate LiTaO 3 (LT), has revolutionized their use in nonlinear optical applications [1,2]. The performance of LN and LT as an electro-optic, photorefractive, piezoelectric, and nonlinear optical crystals, make them useful for many different applications. It has been shown that LN and LT with periodical 1D-and 2D-domain structures possessing an efficient quasi-phase-matching open up a wide range of possibilities for bulk and waveguide nonlinear optical devices [2][3][4]. During ten years after the first electrical poling of bulk LN samples [5], research on periodically poled LN and LT is under intense interest around the world resulting in production of photonic devices. Breaking the micron-period barrier for periodical domain patterning in LN and LT is very desirable for several new electrooptic applications such as tunable cavity mirrors, which need a periodicity of about 350 nm. The most efficient

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Section: Materials and Experimental Conditionssupporting

confidence: 49%

Section: Materials and Experimental Conditionsmentioning

confidence: 99%

Kinetics of ferroelectric domains: Application of general approach to LiNbO3 and LiTaO3

Shur¹

Frontiers of Ferroelectricity

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“…For an explanation of the observed results, we have proposed a mechanism of the jerky wall motion. It is known 16,17 that the plane domain wall motion slows with the shift from the initial position. This effect is due to a reduction of the local field at the wall by a residual depolarization field E rd produced by bound charges in the newly switched area behind the moving domain wall and compensated partially by fast external screening.…”

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confidence: 99%

Polarization reversal in congruent and stoichiometric lithium tantalate

Shur

Николаева

Shishkin

et al. 2001

Applied Physics Letters

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Switching kinetics has been compared in congruent (CLT) and stoichiometric (SLT) lithium tantalate by simultaneous recording of instantaneous domain patterns and switching current. A mechanism of fast domain kinetics in CLT driven by domain merging was revealed. The important information about the domain kinetics has been obtained by the statistical analysis of current noise in SLT. A model of jerky domain wall motion is proposed.

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“…Previous work on PZT thin films has focused on processing methods and the resulting crystallographic, electric and dielectric properties. Relatively little attention has been paid to the morphological studies in PZT thin films and less in the fractal surface analysis [3].…”

Section: Introductionmentioning

confidence: 99%

Scaling laws in PZT thin films grown on Si(001) and Nb-Doped SrTiO3(001) substrates

Ramírez¹,

Cortés²,

Lopera³

et al. 2006

Braz. J. Phys.

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A dynamic scaling and kinetic roughening study was done on digitized atomic force microscope (AFM) images of Pb(Zr 0.52 , Ti 0.48 )O 3 (PZT) thin films. The films were grown on Si(001) and Nb − SrTiO 3 (001) (STNO) substrates via rf-sputtering technique at high oxygen pressures at substrate temperatures of 600 o C by varying the deposition time and keeping other growth parameters fixed. By using a specific self-designed algorithm, we can extract from digitized 512-pixel resolution AFM-images, quantitative values of roughness parameters, i.e., interface width (σ ( )), lateral correlation length (ξ || ) and, roughness exponent (α). Herein, we report on the sputter-time deposition dependence of the parameters describing roughness for both kinds of substrates. We report α-values for different time depositions (between 15 and 60 minutes) close to 0.55 for Si substrates and 0.63 for Nb − SrTiO 3 substrates, indicating that the surface becomes more correlated in STNO substrates. The α-values are associated to the Lai-Das-Sarma-Villain model.

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Motion of a planar domain wall in the ferroelectric-ferroelastic gadolinium molybdate

Cited by 7 publications

References 7 publications

Kinetics of ferroelectric domains: Application of general approach to LiNbO3 and LiTaO3

Kinetics of ferroelectric domains: Application of general approach to LiNbO3 and LiTaO3

Polarization reversal in congruent and stoichiometric lithium tantalate

Scaling laws in PZT thin films grown on Si(001) and Nb-Doped SrTiO3(001) substrates

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