The modification of Kolmogorov–Avrami theory for real objects accounting for the finiteness of the transformed object/media is proposed. It takes into account the changing of the domain growth dimensionality (“geometrical catastrophe”) during the switching process. The validity of the proposed approach has been confirmed by model experiments and computer simulation. By this approach we have obtained the essential information about phase kinetics concealed in integrated experimental data. The method has been successfully used for the description of domain kinetics during the fast switching in ferroelectric single crystals and thin films. The scenario of domain evolution and voltage dependence of the main kinetic parameters have been discussed.
We demonstrate a promising method of nanoscale domain engineering, which allows us to fabricate regular nanoscale domain patterns consisting of strictly oriented arrays of nanodomains (diameter down to 30 nm and density up to 100 μm−2) in lithium niobate. We produce submicron domain patterns through multiplication of the domain spatial frequency as compared with the electrode one. The fabrication techniques are based on controlled backswitched poling.
We present experimental evidence of the formation of stable charged domain walls (CDWs) in congruent lithium niobate during switching. CDW evolution under the action of field pulses was in situ visualized. CDW boundary motion velocity is about 60 μm/s at 20 kV/mm. Relief of CDW strongly depends on applied field. Dielectric response in the presence of CDW demonstrates the pronounced frequency dependence in the range 50–150 °C. We propose the mechanism of CDW self-maintained propagation governed by self-consistent electrostatic interaction between the wall’s steps.
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