MOSFET scaling: Impact of two-dimensional channel materials

Granzner, Ralf; Geng, Zhansong; Kinberger, W.; Schwierz, Frank

doi:10.1109/icsict.2016.7998953

Cited by 8 publications

(10 citation statements)

References 9 publications

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“…Moreover, MoS 2 can potentially outperform conventional 3D semiconductor devices at aggressively scaled channel lengths (L CH < 5 nm) thanks to its excellent electrostatic integrity [122,123], finite band-gap, and preserved carrier mobilities even at sub-nm thickness (monolayer MoS 2 thickness 0.65 nm), unlike 3D semiconductors that can experience severe mobility degradation (due to scattering from dangling bonds, interface states, atomic level fluctuations, surface roughness, etc.) and a large band-gap increase (due to quantum confinement effects) with dimensional/body thickness scaling below~5-10 nm [35,36,[124][125][126]. Thus, the high predicted mobilities and saturation velocities, coupled with its atomically thin nature, high optical transparency and mechanical flexibility, makes 2D MoS 2 very attractive for applications in ultra-scaled CMOS technologies as well as in flexible nanoelectronics and flexible "smart" systems [74,118,[127][128][129].…”

Section: Projected Performance Of 2d Mosmentioning

confidence: 99%

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

et al. 2018

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Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.

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Section: Projected Performance Of 2d Mosmentioning

confidence: 99%

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

et al. 2018

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“…In all ranges of transistor length, the DIBL effect for transistors with combination numbers 3 and 4 is higher than for transistors with combination numbers 1 and 2. It can be understood in the framework of a simple model describing the capacitive coupling between the channel and the device electrodes, proposed in [11]. Within this model, the modified expression for DIBL given by [11] is expressed as follows:…”

Section: Dibl Effect For Different Combinations Of the Gate Oxide And...mentioning

confidence: 99%

“…As mentioned above, a 2D MoS2-based MOSFET has sufficient immunity against short channel effects, especially against the DIBL effect [2]. The value of this effect depends on the electrical parameters of the channel material and the materials surrounding the channel, in particular, the dielectric constant of these materials [11]. However, thermal parameters of the same materials, namely thermal conductivity and heat capacitance, are responsible for thermal properties or thermal effects in the transistor.…”

Section: Introductionmentioning

confidence: 99%

Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

Atamuratov¹,

Saparov²,

Yusupov³

et al. 2023

Preprint

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Abstract— In this paper, degradation effects such as the self-heating effect and the DIBL effect in 2D-MoS2-based MOSFETs are investigated through simulations. These are transistors with Al2O3 and HfO2 as the gate oxide and SiO2 and HfO2 as the back oxide (BOX). The self-heating effect (SHE) is simulated using the thermodynamic transport model. The dependence of the DIBL effect (Drain Induced Barrier Lowering) and the lattice temperature in the center of the channel on the gate length for transistors with different gate oxide and BOX materials is considered. Transistors are considered where the channel is fully and partially (just below the gate) covered by gate oxide. It is shown that the transistors with Al2O3 as gate oxide and SiO2 as BOX materials have higher immunity to DIBL effect and transistors with HfO2 as gate oxide and HfO2 as BOX materials have higher immunity to SHE.

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“…In modern electronics, there has always been a high demand to integrate more electronic components on a chip, a need which has fueled the scaling of devices with critical dimensions down to a few nanometers. − To maintain the electrostatic control as the channel length is scaled down, a thinner channel structure must be used to reduce short-channel effects. − Thus, two-dimensional (2D) materials, which can be thinned down to single atomic layer, have been considered promising for gaining short-channel immunity and have been employed to demonstrate high on–off current ratios, low power consumption, and fast operation. − …”

mentioning

confidence: 99%

“…To fabricate nanoscale short-channel devices based on 2D materials, several fabrication strategies have been applied. For example, nanoscale channel length was achieved by angled metal deposition and using a nanowire mask. − However, those methods cannot be used to fabricate multiple devices or to orient devices in different directions from the direction of angled deposition. Other approaches have been proposed to provide a precreated nanogap platform, which works as a source–drain electrode pair, onto which 2D materials are transferred as a channel material. , Based on these methods, short-channel devices based on 2D materials have been reported, where the large bandgap of MoS 2 allowed a high on–off ratio (∼10 6 ) even with the short channel length.…”

mentioning

confidence: 99%

Ultraflat Sub-10 Nanometer Gap Electrodes for Two-Dimensional Optoelectronic Devices

Namgung

Koester

2021

ACS Nano

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Two-dimensional (2D) materials are promising candidates for building ultrashort-channel devices because their thickness can be reduced down to a single atomic layer. Here, we demonstrate an ultraflat nanogap platform based on atomic layer deposition (ALD) and utilize the structure to fabricate 2D material-based optical and electronic devices. In our method, ultraflat metal surfaces, template-stripped from a Si wafer mold, are separated by an Al2O3 ALD layer down to a gap width of 10 nm. Surfaces of both electrodes are vertically aligned without a height difference, and each electrode is ultraflat with a measured root-mean-square roughness as low as 0.315 nm, smaller than the thickness of monolayer graphene. Simply by placing 2D material flakes on top of the platform, short-channel field-effect transistors based on black phosphorus and MoS2 are fabricated, exhibiting their typical transistor characteristics. Furthermore, we use the same platform to demonstrate photodetectors with a nanoscale photosensitive channel, exhibiting higher photosensitivity compared to microscale gap channels. Our wafer-scale atomic layer lithography method can benefit a diverse range of 2D optical and electronic applications.

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MOSFET scaling: Impact of two-dimensional channel materials

Cited by 8 publications

References 9 publications

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

Ultraflat Sub-10 Nanometer Gap Electrodes for Two-Dimensional Optoelectronic Devices

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