Abstract:The nanotechnology trenzd needs more precisely nmodels for active devices. From? this point of view the design of linear analog circuits lacks mtodels for state-of-the-art MOS transistors to accuratelv describe the conductance and distortiont effects. This is mainly due to inaccu-crate modellintg of the second order effects induced by high vertical gate field such as nmobility degradation and short channel series resistance and second order effects induced by parallel drain field like velocity saturation in th… Show more
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