Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium

Abstract

The present study provides a multi-scale investigation of the crystalline quality and the structural defects present in heteroepitaxial diamond films grown on iridium/SrTiO 3 (001) substrates by microwave plasma assisted chemical vapor deposition. X-ray diffraction, Raman spectroscopy and low temperature cathodoluminescence are combined to accurately characterize the mosaicity, the density of dislocations and the residual strain within the films. X-ray diffraction and Raman results confirm a structural quality at the state-of-the-art according to the epitaxial relationship 〈100〉diamond(001) // 〈100〉iridium(001) // 〈100〉SrTiO 3 (001). In addition, Raman and cathodoluminescence observations on cross-sections reveal the presence of local strain.

Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

“…Thus, the study of Raman spectra with an emphasis on the line position and width can help in the characterization of diamonds and diamond-related materials. This message has been exploited in a prodigious number of works [11][12][13][14][15][16][17][18][19][20].…”

Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond

“…A JEOL 7001F field emission-SEM with an optical detection system was used to collect CL spectra with high spatial and spectral resolution in the UV range. [31] An acceleration voltage of 5 kV was applied, corresponding to the stopping depth for electrons at %200 nm. [32] To resolve the lines of both the free and bound excitons in the UV range, a requirement to determine the dopant concentrations, the samples were cooled down to %7 K using liquid helium.…”

Chemical Vapor Deposition Single‐Crystal Diamond: A Review

“…Due to the strong increase in the Raman scattering, Ultraviolet Raman, operating at 325 nm, is well adapted to characterize the crystalline quality and the strain within such thin heteroepitaxial films. [ 131 ] The dislocation density within the diamond lattice can be estimated either from HRTEM images, [ 132 ] Cathodoluminescence (CL), as dislocations act as nonradiative recombination centers for electron–hole pairs and excitons, [ 133 ] or from the counting of etch pits generated by H 2 /O 2 plasma at the film surface. [ 134 ] According to HRTEM, pure edge dislocations are more efficiently reduced.…”