Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

Surovtsev, N. V.; Kupriyanov, Igor N.

doi:10.3390/cryst7080239

Cited by 30 publications

(21 citation statements)

References 34 publications

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“…The temperature dependence of line widths and line positions of ions in crystals have been investigated by researchers since the 1960s . The line width studies for rare earth and transition metal ions were based off two phonon Raman scattering and the direct one phonon absorption and emission processes.…”

Section: Introductionmentioning

confidence: 77%

“…The temperature dependence of line widths and line positions of ions in crystals have been investigated by researchers since the 1960s. [2][3][4][5][6][7][8][9][10][11][12][13][14] The line width studies for rare earth and transition metal ions were based off two phonon Raman scattering and the direct one phonon absorption and emission processes. It seems to be that the dominant mechanism is the Raman process above 50 K, whether a transition metal ion or rare earth ion.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Full analytical evaluation of the line shift and line width of ions in solids for Raman processes

Eser

Koç

2018

Luminescence

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In this paper, we present a new analytical method to evaluate the temperature dependence of the thermal line shift and thermal line width of spectral lines in the Raman process using a simple approximation for the Debye functions. The proposed formulae guarantee the accurate and fast calculation of the thermal line shift and thermal line width. As an example of application, the analytical expression obtained is used to calculate the line shift and line width of the E → A transitions in V :MgO at temperatures from 0 K up to 500 K. This analytical evaluation shows that our results are satisfactory for the wide range temperature variations.

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Section: Introductionmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Full analytical evaluation of the line shift and line width of ions in solids for Raman processes

Eser

Koç

2018

Luminescence

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“…In order to use this property of the diamond Raman spectrum to full extent, it is important to understand the physical mechanisms behind the effect of defects and impurities on the vibrational properties of diamond. This appealing question is considered in the contribution by Nikolay Surovtsev and Igor Kupriyanov, who studied the effect of nitrogen impurities on the Raman line width in diamond [56]. They show that the defect-induced broadening of the diamond Raman line is temperature independent and comes from the optical phonon scattering on the defects.…”

Section: Some Facets Of Synthetic Diamond Crystalsmentioning

confidence: 99%

The Many Facets of Diamond Crystals

Palyanov

2018

Crystals

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This special issue is intended to serve as a multidisciplinary forum covering broad aspects of the science, technology, and application of synthetic and natural diamonds. This special issue contains 12 papers, which highlight recent investigations and developments in diamond research related to the diverse problems of natural diamond genesis, diamond synthesis and growth using CVD and HPHT techniques, and the use of diamond in both traditional applications, such as mechanical machining of materials, and the new recently emerged areas, such as quantum technologies. The results presented in the contributions collected in this special issue clearly demonstrate that diamond occupies a very special place in modern science and technology. After decades of research, this structurally very simple material still poses many intriguing scientific questions and technological challenges. It seems undoubted that diamond will remain the center of attraction for many researchers for many years to come.

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“…Nitrogen incorporation in diamond lattice results in significant mechanical stress, increase in vacancy defects and also N-vacancy defect complexes. Consequently, N doping in diamond decreases the phonon life time which manifest as broadening of Raman line width [20]. In addition, a characteristic vibration at 1190 cm -1 is observed for N doped diamond that arises due to C=N-H bonding at grain and GBs [10,21].…”

Section: Introductionmentioning

confidence: 99%

“…NH3 is preferred over N2 because of weaker N-H bond as compared to stronger NN bond of N2 under HFCVD reactor [10]. The reported N/C ratio in the feedstock is varied from as small as 0.1 to greater than 150 % for the growth of N doped diamonds [10][11][12][13][14][15][16][17][18][19][20][21]. The presence of N in feedstock significantly affect the growth mechanism, morphology, growth rate, grain size, chemical bonding at grain and GBs.…”

Section: Introductionmentioning

confidence: 99%

Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

Ganesan¹,

Ajikumar²,

Srivastava³

et al. 2020

Diamond and Related Materials

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Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film.Pure and N doped nanocrystalline diamond films are synthesized on Si by hot filament chemical vapour deposition using NH3:CH4:H2 at different nominal N/C ratios viz. 0, 0.13, 0.35, 0.50 and 0.75 in feedstock. X-ray diffraction analysis reveal a systematic initial increase and then a decrease in crystallite size with N/C ratio in feedstock. Further, a monotonic increase in Raman line width and peak position of diamond band indicates that the compressive strain in diamond lattice increases as a function of N/C ratio upto 0.50. However, at higher N/C ratio of 0.75, the compressive strain gets relaxed a little and produces a lower strain. Furthermore, a unique Raman mode at 1195 cm -1 is observed corresponding to the C=N-H vibrations indicating a significant N concentration in the NCD films. In addition, visible and UV PL studies reveal the presence of several N-related colour centres with multiple emission lines in the range of 380 -700 nm. An optimally N doped diamond film grown at N/C ratio of 0.35 in feedstock shows a significant enhancement in room temperature PL emission at ~ 505 and 700 nm. This PL enhancement is attributed to H3 and other aggregates of N related defect centres, under 355 and 532 nm laser excitations respectively.

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Effect of Nitrogen Impurities on the Raman Line Width in Diamond, Revisited

Cited by 30 publications

References 34 publications

Full analytical evaluation of the line shift and line width of ions in solids for Raman processes

Full analytical evaluation of the line shift and line width of ions in solids for Raman processes

The Many Facets of Diamond Crystals

Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

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