MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O

Ting, W.; Lo, G. Q.; Ahn, Jinho; Chu, Thomas Y.; Kwong, Dim‐Lee

doi:10.1109/55.119150

Cited by 81 publications

(19 citation statements)

References 8 publications

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“…The interface trap density shows a significant increase with nitrogen concentration. This agrees with previous studies that have indicated that the interface trap and fixed charge densities of N 2 0 oxides are higher than those of oxides formed in pure oxygen [3]. Fixed charge density was not studied in this experiment due primarily to the difficulty in accurately measuring fixed charge when ultrathin oxides and highly doped substrates are used.…”

Section: Capacitor Measurementssupporting

confidence: 90%

Degradation in Oxide Reliability Due to the Presence of Nitrogen in the Oxidation Ambient

et al. 1993

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Ultrathin rapid thermal oxides have been formed in oxygen with varying levels of nitrogen incorporated into the oxidation ambient. Metal-oxide-semiconductor capacitors and MOSFET devices were subsequently fabricated and tested. Device reliability was degraded by the addition of nitrogen into the oxidation ambient. Time-independent catastrophic breakdown measurements showed a large increase in the number of extrinsic breakdowns in devices formed in higher levels of nitrogen. Device performance was measured by interface trap density, subthreshold slope, channel mobility and threshold voltage. A small increase in the interface trap density was observed for increasing levels of nitrogen in the oxidation ambient. However, no trends were observed for MOSFET devices in terms of subthreshold slope, channel mobility or current drive. No improvement in the interface state generation rate due to nitrogen incorporation in the oxidation ambient was observed in this study. X-ray photoelectron spectroscopy detected no nitrogen in the oxides indicating less than 1% nitrogen incorporation.

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Section: Capacitor Measurementssupporting

confidence: 90%

Degradation in Oxide Reliability Due to the Presence of Nitrogen in the Oxidation Ambient

et al. 1993

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“…To• = Rt + To [1] Where R is the linear growth rate; To is the oxide thickness at growth time t = 0, and Tox is the oxide thickness. The R can be extrapolated from Fig.…”

Section: Experimental and Resultsmentioning

confidence: 99%

Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N 2 O

Chao

Lei

1995

J. Electrochem. Soc.

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“…Further, since N in the oxynitrides is reported to prevent the penetration of B from the p ϩ -gate layer during subsequent hightemperature processing steps, 7,8 it may be imperative to have N at the polysilicon-gate/dielectric interface. 7 But, as N imparts other properties like improved hot-carrier resistance, reduction of interface state generation, etc., [1][2][3][4][5][6] nitrogen is required at the dielectric/Si substrate interface, too. Therefore, for satisfactory performance of silicon oxynitrides in several applications, it would be useful to have a bimodal profile of N in the film, i.e., N concentrated near the top dielectric surface as well as near the dielectric/Si interface.…”

Section: Introductionmentioning

confidence: 99%

Optimization of bimodal nitrogen concentration profiles in silicon oxynitrides

Dang

Takoudis

1999

Journal of Applied Physics

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Since the presence of nitrogen is responsible for highly desirable properties of silicon oxynitrides in the ultra-large-scale integration era, the amount, position, and concentration profile of N in these films are of great interest. In this regard, we have studied several processing sequences (using successive oxynitridation/oxidation/oxynitridation steps) in order to obtain a bimodal N concentration profile with one peak close to the dielectric/Si interface and the other near the top surface of the dielectric. At 900 °C and 1 atm, it is found that the first oxynitridation step is required to incorporate less than a “critical” amount of N so that a bimodal profile is eventually obtained. Suggestions on how to optimize the concentration and profile of N within the silicon oxynitride film through process–property relationships are presented. Further, the flexibility in N incorporation offered by a mixed ambience of nitrous oxide (N2O) and nitric oxide (NO) coupled with the observation that pure NO processing incorporates about one order of magnitude more nitrogen than pure N2O processing could indeed result in novel approaches in designing and optimizing the chemical (electrical and physical) properties of the oxynitrides. Such results may have significant implications for microelectronic applications of the silicon oxynitridation technology.

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MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O

Cited by 81 publications

References 8 publications

Degradation in Oxide Reliability Due to the Presence of Nitrogen in the Oxidation Ambient

Degradation in Oxide Reliability Due to the Presence of Nitrogen in the Oxidation Ambient

Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N 2 O

Optimization of bimodal nitrogen concentration profiles in silicon oxynitrides

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