MOS Capacitor on Tellurium at Low Temperature

Thuillier, J. C.

doi:10.1002/pssa.2210060111

Cited by 5 publications

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References 8 publications

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“…shows the pseudo-TSC current computed for MOS structures (area 1 m2, oxide thickness 2 x 10-7 (3111-3, a,, = -3 x C, these two last values were obtained by a previous study[2]. The recombination constant is estimated to be equal to r = 2 x 10-23 m3 s-1.The simulated experiment is as follows : starting temperature 300 OK, cooling rate 0.5 deg/s to 150 OK.…”

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Thermally stimulated currents from MOS structure on tellurium

Peralta

Thuillier

1974

Phys. Stat. Sol. (a)

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The measurement of thermally stimulated currents from MOS structure on tellurium reveals two types of current. The first one, rather important, is only dependent on the rate of heating, the second appears only as a peak or a dip on the first one, when a bias is applied during the cooling of the sample. The analysis shows that the main current is mainly due to the exchange of charges of a continuum of surface states with the bands of the semiconductor. The peak is assumed to correspond to the reorientation of dipoles in the anodic oxide.

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Thermally stimulated currents from MOS structure on tellurium

Peralta

Thuillier

1974

Phys. Stat. Sol. (a)

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Electric‐Field‐Modulated Reflectance on Tellurium

Herwig

Stuke

Weiser

1974

Physica Status Solidi (b)

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The electroreflectance spectrum of tellurium single crystals (MOS structure) has been studied in the energy range between 0.3 and 3.2 eV and compared with the spectrum of selenium. Three transitions are observed below 0.5 eV which correspond t o the threefold split valence band at point H of the Brillouin zone. The sequence of these energy bands is the same as in selenium and also the temperature shift of the gap shows a similar behaviour for both materials. At higher energies (ho > 1 eV), the spectrum of tellurium is much more complicated than that of selenium and a correlation t o bandstructure calculations is only partially possible. The dependence of the electroreflectance response on a dc bias points to the existence of slow surface states at the interface tellurium-tellurium dioxide.An trigonalen Tellur-Einkristallen wurde das Elektroreflexionsspektrum (MOS-Struktur) im Energiebereich zwischen 0,3 und 3,2 eV untersucht und mit dem Spektrum yon Selen verglichen. Unterhalb 0,5 eV wurden drei ubergange gefunden, die dem dreifach aufgespaltcnen Valenzband im Punkt H der Brillouinzone entsprechen. Die Folge der Bander ist die gleiche wie in Selen nahe der Bandkante, auch die Teniperaturverschiebung des Gaps zeigt fur beide Stoffe ein ahnliches Verhalten. Bei hoherer Energie (hw > 1 eV) ist das Spektrum des Tellurs stark von dem des Selens verschieden und eine Zuordnung zur Bandstruktur nur beschrsnkt moglich. Aus dem Verhalten des Elektroreflexionssignals bei uberlagerter Gleichspannung ergibt sich die Existenz langsamer Zustande hoher Dichte am Kontakt Tellur-Tellurdioxid.

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Electrical and Optical Properties of MIS Devices

Agajanian¹

1976

Semiconducting Devices

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MOS Capacitor on Tellurium at Low Temperature

Cited by 5 publications

References 8 publications

Thermally stimulated currents from MOS structure on tellurium

Thermally stimulated currents from MOS structure on tellurium

Electric‐Field‐Modulated Reflectance on Tellurium

Electrical and Optical Properties of MIS Devices

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