Thermally stimulated currents from MOS structure on tellurium

Abstract

The measurement of thermally stimulated currents from MOS structure on tellurium reveals two types of current. The first one, rather important, is only dependent on the rate of heating, the second appears only as a peak or a dip on the first one, when a bias is applied during the cooling of the sample. The analysis shows that the main current is mainly due to the exchange of charges of a continuum of surface states with the bands of the semiconductor. The peak is assumed to correspond to the reorientation of dipoles in the anodic oxide.