MOS area sensor: Part I—Design consideration and performance of an n-p-n structure 484 × 384 element color MOS imager

Koike, N.; Takemoto, Iwao; Satoh, K.; Hanamura, S.; Nagahara, Shusaku; Kubo, M.

doi:10.1109/t-ed.1980.20087

Cited by 29 publications

(6 citation statements)

References 3 publications

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“…For example, when the dielectric constant of the liquid crystal is 7.0, the thickness of liquid crystal layer is 5.0 ~m, and the relative dielectric constant of the color layer is 3.5. Equation [2] is given by Vc 1 Va 2.5/d + 1 [3] Even for a value of 0.5 ~m the calculated voltage drop is about 17%. This value is sufficiently large and leads to the necessity of supplying high voltage to the LCD cell.…”

Section: Resultsmentioning

confidence: 95%

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Reliability Improvements of Dichromated Gelatin Color Filter for TFT‐LCDs

Endo

Hirose

Sato

et al. 1991

J. Electrochem. Soc.

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Materials and processing technologies for a high quality color filter consisting of ammonium-dichromated gelatin (ADG) were studied. To achieve adequate characteristics of color reproducibility, the fixing process using tannic acid and potassium antimonyl tartrate and the thermal stability were investigated. The following results were attained: (i). It was clarified that the fixing process played two roles such as the strengthening of the binding force between gelatin and dye molecule, and prevention of a reaction between the remaining dyeing sites in gelatin and dye molecules. Careful control of

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Section: Resultsmentioning

confidence: 95%

“…They have recently found application in the fabrication of tricolor mosaics for optoelectronic devices because of their good photosensitivity, transparency, and dyeing properties. Ammoniumdichromated gelatin (ADG) films have been used as color filters for liquid crystal display devices (1,2), and solidstate imaging devices (3)(4)(5).…”

mentioning

confidence: 99%

Reliability Improvements of Dichromated Gelatin Color Filter for TFT‐LCDs

Endo

Hirose

Sato

et al. 1991

J. Electrochem. Soc.

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“…The PPS can be attributed to Noble [15] and was the first CMOS image sensor available in the market [16], [17], but its development was discontinued due to factors related with its signal-to-noise ratio (SNR). Each pixel of a PPS consists basically of a photodiode and a switching transistor.…”

Section: A Passive Pixel Sensor (Pps)mentioning

confidence: 99%

“…In the first developed PPSs, the accumulated charge was read as an output current in the horizontal line, which was later converted into a voltage by means of a resistor or a transimpedance amplifier [16], [17]. This method has some disadvantages such as: -large smear noise; -large pixel reset ( ) noise; -large fixed pattern noise.…”

Section: A Passive Pixel Sensor (Pps)mentioning

confidence: 99%

Pixel Readout Circuit for X-Ray Imagers

2010

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This paper describes the per-pixel readout circuit of an X-ray imaging matrix and compares it to other solutions. The per-pixel readout circuit consists of a digital pixel sensor array constituted by a photodiode and a one-bit first-order sigma-delta A/D converter for each pixel. The output of each pixel is a digital bit stream, containing information about the intensity of the light that falls into its photodiode. The sigma-delta A/D converters use only 19 small size MOSFETs and one capacitor. In order to perform the X-ray detection, a scintillator crystal must be placed above each photodiode for converting the X-ray energy into visible light with wavelengths near to the quantum efficiency peak of the photodiodes. Then, the visible light is converted into electronic charges by each photodiode, which is part of digital pixel sensor. The comparison between the solution presented here and other solutions show that the implemented circuit is simpler and its resolution is similar or even superior.

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“…The original circuit of the dynamic ratio less shift register was first proposed by I. Takemoto in 1979 [１], and was applied to scanning circuit of Hitachi's MOS imaging devices [2]. Before CMOS circuits were commonly utilized in Si LSIs, the circuit was one of the highest speed and the lowest power shift registers.…”

Section: Original Circuitmentioning

confidence: 99%

21.3: An Improved Dynamic Ratio Less Shift Register Circuit Suitable for LTPS-TFT LCD Panels

Miyazawa

Goto

Hasegawa

et al. 2005

SID Symposium Digest

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We have improved the dynamic ratio less shift register circuit, originally designed for use in Si-LSIs, so as to be applied to LTPS TFTs on the glass substrate with stable operations. In the operation of the dynamic circuit, the conditions arising from two major obstacles, drain avalanche hot carrier effect and massive bias current, which degrade the transistors in the long term operation, can be avoided. By adopting this improved circuit, we are successfully mass-producing highly reliable LTPS-TFT LCD panels which consist only of n-type TFTs.

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MOS area sensor: Part I—Design consideration and performance of an n-p-n structure 484 × 384 element color MOS imager

Cited by 29 publications

References 3 publications

Reliability Improvements of Dichromated Gelatin Color Filter for TFT‐LCDs

Reliability Improvements of Dichromated Gelatin Color Filter for TFT‐LCDs

Pixel Readout Circuit for X-Ray Imagers

21.3: An Improved Dynamic Ratio Less Shift Register Circuit Suitable for LTPS-TFT LCD Panels

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