2013
DOI: 10.1016/j.phpro.2013.10.022
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Morphology, Structural and Dielectric Properties of Vacuum Evaporated V2O5 Thin Films

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Cited by 11 publications
(7 citation statements)
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“…The observed optical and dielectric properties of the hybrid PVA-InZnO thin lm are in good agreement with earlier reported work on other oxide materials. 31,[101][102][103] The obtained optical and dielectric properties of the dip coated hybrid PVA-InZnO thin lms are good enough to be used in optical devices and as high dielectric layer in organic thin lm transistors.…”
Section: Uv-visible-nir Spectroscopymentioning
confidence: 91%
“…The observed optical and dielectric properties of the hybrid PVA-InZnO thin lm are in good agreement with earlier reported work on other oxide materials. 31,[101][102][103] The obtained optical and dielectric properties of the dip coated hybrid PVA-InZnO thin lms are good enough to be used in optical devices and as high dielectric layer in organic thin lm transistors.…”
Section: Uv-visible-nir Spectroscopymentioning
confidence: 91%
“…Therefore, the nonlinearity of current-voltage characteristics became considerably lower and it became impossible to reach electric field E 1 (at 1 mA cm −2 ) under our experiment conditions. Besides, the sample with V 2 O 5 addition exhibits lower ε = 14 due to the influence of the vanadium oxide phase with low relative dielectric permittivity [27,28].…”
Section: Addition Nonlinearity Electric Field Dielectric Electrical Conductivitymentioning
confidence: 99%
“…Therefore the nonlinearity of currentvoltage characteristics became considerable less and it became impossible to reach the breakdown electric field E 1 (at j = 1 mA·cm -2 ) in our experiment. Besides, the sample with V 2 O 5 addition exhibits lower value ε ≈ 14 (Table 1) due to the influence of vanadium oxide phase with not high relative dielectric permittivity [21,22].…”
Section: Electrical Characteristicsmentioning
confidence: 99%