2018
DOI: 10.1364/oe.26.029283
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Morphology of single picosecond pulse subsurface laser-induced modifications of sapphire and subsequent selective etching

Abstract: The effect of 1030nm single picosecond pulsed laser-induced modification of the bulk of crystalline sapphire using a combined process of laser amorphization and selective wet chemical etching is studied. Pulse durations of more than 1 picosecond are not commonly used for this subsurface process. We examine the effect of 7 picosecond pulses on the morphology of the unetched, as well as etched, single pulse modifications, showing the variation of shape and size when varying the pulse energy and the depth of proc… Show more

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Cited by 17 publications
(11 citation statements)
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“…When focused laser beam modifies crystalline sapphire modified region becomes amorphous [ 143 ]. Then, amorphous and porous regions are etched out in aggressive etchants like concentrated (40–50%) HF at room temperature [ 140 , 141 , 142 , 144 , 145 , 146 ] or around 35% KOH solution heated to 85–100 °C temperature [ 147 ]. Even more exotic etchant choices were demonstrated—sapphire was etched in phosphoric and sulfuric acid mixture at 300 °C temperature [ 148 , 149 ].…”
Section: Fabrication Of Functional 3d Structuresmentioning
confidence: 99%
“…When focused laser beam modifies crystalline sapphire modified region becomes amorphous [ 143 ]. Then, amorphous and porous regions are etched out in aggressive etchants like concentrated (40–50%) HF at room temperature [ 140 , 141 , 142 , 144 , 145 , 146 ] or around 35% KOH solution heated to 85–100 °C temperature [ 147 ]. Even more exotic etchant choices were demonstrated—sapphire was etched in phosphoric and sulfuric acid mixture at 300 °C temperature [ 148 , 149 ].…”
Section: Fabrication Of Functional 3d Structuresmentioning
confidence: 99%
“…This could be accounted for by the band-gap of sapphire (~9 eV), which is much wider compared with the other materials. Such a large band-gap means that sapphire is somewhat transparent for wavelengths between approximately 0.3 µm to 4 µm [37,38], and gives rise to the laser beam focussing slightly below the surface of the sapphire. This, along with the mechanical properties of sapphire, is believed to have given rise to the finer grains of deposited material.…”
Section: Laser Surface Modification Of the Optically Transparent Materialsmentioning
confidence: 99%
“…48728) with a 10-mm entrance aperture is also used, resulting in an estimated focal-spot diameter of 2.6 μm. This objective is not coverslip corrected, resulting in spherical aberration that stretches the focus axially and reduces the peak intensity at the focus [22]. Reduced intensity from spherical aberration effects and chirp from additional glass in the 0.95-NA objective is compensated by increasing the pulse energy.…”
Section: Experimental and Calculation Details A Experimentsmentioning
confidence: 99%