Morphology of SiC nanowires grown on the surface of carbon fibers

Abstract

SiC nanowires (NWs) with diameters of 20-200 nm and lengths from tens to hundreds of micrometers have been synthesized by the carbothermal reduction of colloidal silica. The morphology and microstructure of NWs have been studied in detail by electron microscopy techniques. SiC NWs have been found to be hexagonal prisms, ''bamboo-like'' nanorods and nanobelts. The NWs with a [111] growth axis are hexagonal prism nanorods, while the nanobelts have growth directions varying from [110] to [113]. It has been found that NW growth proceeds in two stages. Initially, SiC crystallites grow on the carbon fiber surface. These crystallites serve as seeds, on which the SiC NWs nucleate and grow. The crystallites containing microtwins and stacking faults (SFs) with a preferential [111] growth direction give rise to the growth of nanorods, while the nanobelts start growing on the (111) facets of relatively perfect crystallites. Wires with core (SiC)-shell (SiO 2 ) structure have been obtained under special temperature treatment in air. The core-shell structure has been confirmed by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDX) mapping techniques.

Investigation on heating behavior during the preparation of SiC crystals by microwave sintering

“…A broad diffraction peak ranging from 20° to 30° appears, representing residual carbon derived from coal mineral particles imply that the interior coal does not readily in the reaction. A small peak marked with “SF” ahead of the highest intensity peak (111) is presumably due to defects such as stacking faults and twin faults as is suggested in previous reports …”

“…A small peak marked with "SF" ahead of the highest intensity peak (111) is presumably due to defects such as stacking faults and twin faults as is suggested in previous reports. 22,23 The phase compositions of samples were also examined by Raman spectroscopy. The spectra obtained from the samples annealed at different input microwave power rates exhibit similar shapes and peaks at ca.…”

Single crystalline 3C–SiC nanowires grown on the diamond surface with the assistance of graphene

“…The regularly arranged lattice fringes are clearly observed, which reveals its high crystallinity. Simultaneously, the HRTEM image indicates that this crystalline structure contains heavy stacking faults and micro twins on the basal planes, similar to the reported results[25]. The atomic inter planar spacing is approximately 0.252 nm, which is equal to the8 spacing of the {111} crystal faces of 3C-SiC (JCPDS29-1129).…”

In situ synthesis of SiC nanowire porous layer on carbon/carbon composites

“…[39][40][41][42][43][44][45] The former generally involves catalyst while the latter one does not. [39][40][41][42][43][44][45] The former generally involves catalyst while the latter one does not.…”