Morphology and surface electronic structure of MBE grown InN

Himmerlich, Marcel; Krischok, S.; Lebedev, V.; Ambacher, O.; Schaefer, J. A.

doi:10.1016/j.jcrysgro.2007.04.014

Cited by 46 publications

(45 citation statements)

References 23 publications

(36 reference statements)

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“…Obviously, the X-ray induced VB emission is identical for both reconstructions, indicating a similar bulk density of states (DOS). The observed spectral structure is in excellent agreement with theoretical calculations and previously reported results by photoelectron spectroscopy on InN surfaces [17,25]. The extrapolation of the VB trailing edge results in a valence band maximum (VBM) of 1.45 eV below the Fermi level and hence demonstrates the existence of a strong downward band bending induced by a surface electron accumulation layer on adsorbate-free InN films with existing surface reconstruction.…”

Section: Resultssupporting

confidence: 88%

“…In addition, excess In should cause drastic changes in the valence band (VB) and the shallow In4d core level emission [17,18] which are not observed. The corresponding XPS data for the VB region are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The preparation of clean InN surfaces is rather difficult [17,18]. It was shown that a combination of atomic hydrogen cleaning (AHC) and annealing is a suitable method to remove surface contamination from InN without affecting the surface quality [19], but the existence of In-adlayers on surfaces prepared by optimised AHC was discovered recently [16].…”

Section: Introductionmentioning

confidence: 99%

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PAMBE growth and in‐situ characterisation of clean (2 × 2) and (√3 × √3) R30° reconstructed InN(0001) thin films

Himmerlich

Eisenhardt

Schaefer

et al. 2009

Physica Status Solidi (b)

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The surface properties of thin InN(0001) films grown by plasma assisted molecular beam epitaxy (PAMBE) were characterised. Two stable surface reconstructions (a (2 × 2) and a (√3 × √3) R30°) are identified which develop depending on the used preparation conditions. The structural, compositional and electronic surface properties were analysed in‐situ using reflection high energy electron diffraction (RHEED) and photoelectron spectroscopy (PES). From the absence of surface contaminants as well as excess indium it can be concluded that these superstructures are formed by single adatom layers. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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PAMBE growth and in‐situ characterisation of clean (2 × 2) and (√3 × √3) R30° reconstructed InN(0001) thin films

Himmerlich

Eisenhardt

Schaefer

et al. 2009

Physica Status Solidi (b)

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“…From the observed peak areas we quantitatively estimated the impurity level assuming a layered structure. A similar data evaluation has been previously applied for InN and is described in more in [8,10] (note that in [10] a uniform contribution is assumed). Cross sections and assymetry parameters are again taken from [11].…”

Section: Microscopic Analysismentioning

confidence: 99%

“…After growth, the samples were transferred through air into the analytic chamber. After introduction into the UHV (base pressure below 2x10 -10 mbar) surface analytics system, described in more detail elsewhere [8], the morphology was investigated using atomic force microscopy (AFM). Further microscopic characterization of the heterostructure-surface was performed by photoelectron emission microscopy (PEEM) using a deuterium lamp with a cut off energy of ~ 6.5 eV.…”

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Characterization of GaN‐based lateral polarity heterostructures

Lorenz

Lebedev

Niebelschütz

et al. 2008

Phys. Status Solidi (c)

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GaN‐based lateral polarity heterostructures (LPH) were grown on sapphire substrates using molecular beam epitaxy. The LPH samples consist of periodical N‐face (000‐1) (grown directly on Al2O3) and Ga‐face (0001) (grown on a AlN bufferlayer) GaN stripes. The GaN‐based LPH have been characterized using surface sensitive techniques. The GaN‐based LPH consist of smooth Ga‐face (0.4 nm RMS) and N‐face regions of higher roughness (7 nm RMS) with small (<70 nm as measured by atomic force microscopy) and well‐defined inversion domain boundary regions (IDBR). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Changes in the valence band structure of as‐grown InN(0001)‐2 × 2 surfaces upon exposure to oxygen and water

Eisenhardt

Reiß

Himmerlich

et al. 2010

Physica Status Solidi (a)

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We investigated the surface chemistry and valence band (VB) structure of as-grown thin InN(0001)-2 Â 2 films as well as their change upon the exposure to oxygen and water. The InN films were grown by plasma-assisted molecular beam epitaxy (PAMBE) and in situ characterized by reflection high electron energy diffraction (RHEED) and photoelectron spectroscopy (UPS, XPS). The oxygen and water exposure was directly performed on the as-grown, contamination-free InN surfaces at room temperature and leads to changes in the chemical surface states as well as the electronic properties. For 2 Â 2 reconstructed InN surfaces one observes directly after growth a surface state at the Fermi-edge which decreases continuously with oxygen and water exposure. Furthermore, two oxygen related electronic states develop in the VB at binding energies at around 5 and 10 eV. For water exposure a third weak state around 8 eV is additionally observed. The impact of oxygen and water on the work function F as well as the variation of surface band bending was investigated. In both cases for initially 2 Â 2 reconstructed surfaces a reduction in the downward band bending is found, while F increases in the case of oxygen exposure but in the case of interaction with water a reduced work function is observed. The oxygen uptake rates reveal a higher reactivity of water with InN surfaces compared to oxygen. Furthermore, during oxidation and water exposure different chemical oxygen bonds are formed, but a direct assignment to In-O or N-O bonds is difficult due to changes in the In3d and N1s XPS core level peak shape.

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Morphology and surface electronic structure of MBE grown InN

Cited by 46 publications

References 23 publications

PAMBE growth and in‐situ characterisation of clean (2 × 2) and (√3 × √3) R30° reconstructed InN(0001) thin films

PAMBE growth and in‐situ characterisation of clean (2 × 2) and (√3 × √3) R30° reconstructed InN(0001) thin films

Characterization of GaN‐based lateral polarity heterostructures

Changes in the valence band structure of as‐grown InN(0001)‐2 × 2 surfaces upon exposure to oxygen and water

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