Morphology and interface characteristics of ZnO films deposited at room temperature and 750 °C

Liu, Z.W.; Sun, Cheng; Zhang, Q.Y.; Wang, Y.N.; Wu, Bao Jia; Jin, Zhenyu

doi:10.1016/j.surfcoat.2006.07.049

Cited by 9 publications

(5 citation statements)

References 14 publications

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“…It can also be used as piezo electric devices and gas sensors (Kang and Joung 2007;Ferro 2009). Different methods have been employed to prepare the ZnO thin films, such as sputtering (Mahmood et al 1995;Liu et al 2007), thermal evaporation (Ma et al 1996), sol-gel method (Tsay et al 2010), electron beam evaporation method (Varnamkhasti et al 2012), pulsed laser evaporation (Zhao et al 2006), and spray pyrolysis technique (Lokhande et al 2002;Alver et al 2007;Sahay and Nath 2008).…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

2013

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Zinc oxide nanofiber thin films have been deposited on glass substrate by spray pyrolysis technique. The X-ray diffraction studies revealed that the films are polycrystalline with the hexagonal structure and a preferred orientation along (002) direction for films annealed for 1 h at 450°C. Further increase in annealing time changes the preferred orientation to (100) direction. The scanning electron microscopic analysis showed the formation of ZnO nanofiber with an average diameter of approximately 800 nm for annealed films. The compositional analysis of nanofiber ZnO thin films were studied by time of flight secondary ion mass spectroscopy, which indicated oxygen deficiency in the films. The optical properties of annealed films have shown a variation in the band gap between 3.29 and 3.20 eV. The electrical conductivity of the as grown and annealed films showed an increase in the conductivity by two orders of magnitude with increase in annealing duration.

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Section: Introductionmentioning

confidence: 99%

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

2013

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“…In the case of as‐deposited ZnO thin films, the value of the deviation angle was 6.5°. The difference of the values may come from the difference of crystalline quality . As the results of the XRD analysis, the crystal quality of ZnO thin film was improved significantly after RTA process.…”

Section: Resultsmentioning

confidence: 98%

“…Though Z.W. Liu et al have reported the interface characteristics of ZnO films deposited at room temperature and 750 °C, less works about the effects of rapid thermal annealing (RTA) on the structure and interfacial characteristic of ZnO thin films were reported.…”

Section: Introductionmentioning

confidence: 96%

Influence of rapid thermal annealing on structure and interfacial characteristic of ZnO thin films

Meng

Yang

et al. 2012

Surface & Interface Analysis

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Highly C-axis oriented ZnO thin film was manufactured by radio-frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X-ray diffraction results showed that the ZnO thin films annealed at 600 C by RTA technique had a perfect C-axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA-annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA-annealed ZnO thin films was fine and uniform compared with the as-deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as-deposited films. High-resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA-annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer.

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“…Randomly-oriented GZO nuclei are formed on the amorphous interfacial layer. Some of them becomes larger to form large grains by consuming the other nuclei and small grains, finally resulting into randomly oriented GZO film with a c-axis oriented columnar microstructure to minimize the surface energy during the film growth process [28]. However, epitaxial GZO nuclei can be formed directly on a hydrothermally grown epitaxial ZnO buffer layer due to nonamorphous interfacial layer and relatively small lattice mismatch between them, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Hydrothermally grown ZnO buffer layer for the growth of highly (4wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates

Shin¹,

Kwon²,

Moholkar³

et al. 2011

Journal of Crystal Growth

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Morphology and interface characteristics of ZnO films deposited at room temperature and 750 °C

Cited by 9 publications

References 14 publications

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

Influence of rapid thermal annealing on structure and interfacial characteristic of ZnO thin films

Hydrothermally grown ZnO buffer layer for the growth of highly (4wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates

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