Morphological study of magnetron sputtered Ti thin films on silicon substrate

Chawla, Vikas; Jayaganthan, R.; Chawla, Amit Kumar; Chandra, Ramesh

doi:10.1016/j.matchemphys.2008.04.048

Cited by 64 publications

(31 citation statements)

References 17 publications

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“…At a power of 120 W, the intensity of the peaks increased with the appearance of (1 0 1) peak [20]. Similar results were obtained by Chawla et al [9] who prepared Ti thin films by DC magnetron sputtering at substrate temperature of 200°C. Junga et al [3] deposited Ti thin films with grid-attached magnetron sputtering in which the substrate bias of 150 V was applied.…”

Section: Structural Analysissupporting

confidence: 85%

“…The ion bombardment can be accomplished by applying negative bias voltage to the substrate [3,4]. Microscale transition-metal thin films have been developed by many researchers using PVD techniques, such as vacuum arc evaporation [5,6], cathode arc [7], reactive sputtering [8][9][10] and ion plating [11,12], etc. Out of these deposition techniques, sputtering was modified with supported discharge/triode magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

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Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

Kavitha

Kannan

Rajashabala

2017

Materials Science-Poland

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The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ·cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ·cm (target power 120 W).

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Section: Structural Analysissupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

Kavitha

Kannan

Rajashabala

2017

Materials Science-Poland

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“…Figure 1 depicts the grazing incidence XRD patterns of the deposited Ti-based films. A textured growth is preferred for the direction of the [002] lattice planes in contrast to the bulk Ti-based alloys, for which the [110] peak was mainly observed [27][28][29]. For the study of the transformation of the α" to the β phase of Ti, the Nb content was kept below 25 at.% to prevent the growth of Nb stabilized β-Ti [30][31][32][33].…”

Section: Computational Detailsmentioning

confidence: 99%

Electronic Origin of α″ to β Phase Transformation in Ti-Nb-Based Thin Films upon Hf Microalloying

2020

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We present results on thin Ti-Nb-based films containing Hf at various concentrations grown by magnetron sputtering. The films exhibit α" patterns at Hf concentrations up to 11 at.%, while at 16 at.% Hf, the β-phase emerges as a stable structure. These findings were consolidated by ab initio calculations, according to which the α"-β transformation is manifested in the calculation of the electronic band energies for Hf contents between 11 and 18 at.%. It turns out that the β-phase transition originates from the Hf 5d contributions at the Fermi level and the Hf 6s hybridizations at low energies in the electronic density of states. Bonding-anti-bonding first neighbor features existing in the shifted plane destabilize the α"-phase, especially at high Hf concentrations, while the covalent-like features in the first neighborhood stabilize the corresponding plane of the β-phase. Thin films measurements and bulk total energy calculations agree that the lattice constants of both α" and β phases increase upon Hf substitution. These results are important for the understanding of β-Ti-based alloys formation mechanisms and can be used for the design of suitable biocompatible materials.of Hf can slightly affect the Ti-Hf's dynamic Young's moduli, while they increase the tensile strength of the system [23].Ti-Nb-Hf ternary alloys have a strong potential to combine the biocompatibility of these three elements. Especially in the thin film form, these Ti-Nb-Hf alloys could be of valuable use as coatings. However, to our knowledge, reports focusing on the stabilization of the β-phase of Ti-Nb-Hf are rather scarce. Aiming to reveal the preferred phases and their electronic origin, we present a combined theoretical and experimental study on Ti-based systems with low Nb substitutions (around 17 at.%-where the α" phase emerges in the Ti-Nb alloys) and various Hf content (between 5.55 and 25.00 at.%). Thin Ti-based films were grown by magnetron sputtering (MS) and characterized by XRD measurements and energy dispersive X-ray spectroscopy (EDS). Linearly augmented plane wave density functional calculations DFT-LAPW TiNb 18.75 Hf x (0 ≤ x ≤ 25 at.%) were used to reveal the preferred crystalline phases and their electronic origin. These results are adequate for understanding the β-Ti based alloy formation mechanisms and can be used for the design of suitable biocompatible materials.

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“…This is because it possess higher adhesion than Gram (+)ve bacteria. 8 The TVC for the S. aureus and E. coli bacteria was found to be 1.60 × 10 1 , 75 and 2.75 × 10 2 , 1.07 × 10 1 for uncoated 316L SS and TiZrN, respectively. Epifluorescence microscopy indicates the antimicrobial efficiency of coated and uncoated 316L SS.…”

Section: Electrochemical Studiesmentioning

confidence: 99%

Corrosion, haemocompatibility and bacterial adhesion behaviour of TiZrN-coated 316L SS for bioimplants

et al. 2015

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TiZrN coating was deposited on 316L stainless steel (SS) by the reactive magnetron co-sputtering technique. Cubic phase of TiZrN with uniform surface morphology was observed by X-ray diffraction and atomic force microscopy. Bacterial adhesion, haemocompatibility and corrosion behaviour of TiZrN coating were examined in order to evaluate the coating's compatibility for ideal implant. Results revealed that TiZrN coatings exhibited less bacterial attachment against Staphylococcus aureus and Escherichia coli bacteria, negligible platelets activation and superior corrosion resistance than the uncoated 316L SS.

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Morphological study of magnetron sputtered Ti thin films on silicon substrate

Cited by 64 publications

References 17 publications

Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

Electronic Origin of α″ to β Phase Transformation in Ti-Nb-Based Thin Films upon Hf Microalloying

Corrosion, haemocompatibility and bacterial adhesion behaviour of TiZrN-coated 316L SS for bioimplants

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