Morphological study of kinetic roughening on amorphous and microcrystalline silicon surface

Kondo, Michio; Ohe, Takahiro; Saito, Koji; Nishimiya, T.; Matsuda, Akihisa

doi:10.1016/s0022-3093(98)00274-9

Cited by 46 publications

(46 citation statements)

References 10 publications

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“…Moreover, this ␣ value is very similar to the value of 1.2 which, associated with relatively high ␤ values, is considered as an "anomalous" situation where the growth is dominated by shadowing effects. 34 Thus the PSD curve tells us that for lengths within the particle size as observed by AFM, the roughness is much affected by shadowing effects. Meanwhile, for larger scales of measurements the heights of the interface are uncorrelated.…”

Section: B Analysis Of Roughness Evolution With Thicknessmentioning

confidence: 98%

“…For this type of representation we have used the Halsey-Wheeler equation 25 assuming an equivalent diameter for the water molecule of 1.3 Å. 34 T-plots permit one to estimate the volume of micro-͑pore size smaller than 2 nm͒, meso-͑pore size between 2 and 50 nm͒, or macro-pores ͑pore size greater than 50 nm͒ present in the films. 25 The corresponding curves are plotted in Fig.…”

Section: A Microstructure and Porosity Of Thin Filmsmentioning

confidence: 99%

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Relationship between scaling behavior and porosity of plasma-depositedTiO2thin films

et al. 2007

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The growth of TiO 2 thin films prepared by plasma enhanced chemical vapor deposition has been studied by analyzing their roughness with the concepts of the dynamic scaling theory. Differences in the growth and roughness exponents have been found depending on the composition of the plasma by using either O 2 or mixtures Ar+ O 2 as plasma gas and titanium isopropoxide as the precursor. The slope of the representations of the film roughness against the deposition time yielded values of the exponent ␤ of 0.45 and 0.32 for, respectively, thin films prepared with plasmas of O 2 or mixtures Ar+ O 2 . Meanwhile, values of the exponent ␣ of 1.15 and 1.89/0.35 were deduced from the power spectral density representations for the films prepared under these two experimental conditions. These values are congruent with growth processes dominated, respectively, by shadowing or diffusion processes. A columnar microstructure was observed by scanning electron microscopy for the thin films prepared with pure oxygen. Meanwhile, homogeneous films were obtained with mixtures of Ar+ O 2 . The open porosity of the films was determined by measuring water adsorption-desorption isotherms with a quartz crystal monitor. This analysis showed that in the samples prepared with mixtures of Ar+ O 2 the porosity consisted exclusively of micropores ͑d Ͻ 2 nm͒, while in the films prepared with an oxygen plasma there were micro-and meso-pores ͑d Ͼ 2 nm͒. It is concluded that the different growth mechanisms found by just changing the chemistry of the plasma are responsible for the quite distinct microstructures, porosities, and optical properties obtained for the films.

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Section: B Analysis Of Roughness Evolution With Thicknessmentioning

confidence: 98%

Section: A Microstructure and Porosity Of Thin Filmsmentioning

confidence: 99%

Relationship between scaling behavior and porosity of plasma-depositedTiO2thin films

et al. 2007

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“…Based on the exceptionally low surface roughness of a-Si:H films grown under these conditions over the temperature (T) range 450 K < T < 750 K [4,5], a ''surface valley-filling'' mechanism has been postulated; according to this mechanism, a mobile surface species, generally assumed to be the SiH 3 radical [5], passivates preferentially dangling bonds (DBs) of Si atoms located in surface valleys [4,6]. Experimental data for the roughness evolution of a-Si:H films provide only indirect interpretations for the smoothening mechanism [7][8][9][10][11] and yield controversial results for the diffusion barrier of the SiH 3 radical on the a-Si:H surface [7,8,12,13]. Moreover, there exists no detailed account of either the role of surface morphology in affecting the incorporation of SiH 3 radicals into the film, or of the preferential locations for growth on the a-Si:H surface.…”

mentioning

confidence: 99%

“…The T dependence of the surface roughening evolution of a-Si:H films has been analyzed in several experiments, under conditions where the dominant deposition precursor is the SiH 3 radical [7][8][9][10][11]. Smets and co-workers studied the scaling behavior of the growth surface morphology of a-Si:H films and derived an activation energy barrier of 1:0 eV for the smoothening mechanism [8].…”

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confidence: 99%

Surface Smoothening Mechanism of Amorphous Silicon Thin Films

et al. 2005

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“…13 However, for a-Si:H growth by plasmas the reported ␣ and ␤ values are in the range 0.5-1.0 and 0.1-0.5 for ␣ and ␤, respectively. [3][4][5][6][7][8][9] In this letter, we report the scaling behavior of the a-Si:H roughness evolution for a broad range of growth rates R d and substrate temperatures T sub . The films have been deposited by the remote expanding thermal plasma ͑ETP͒ under conditions in which film growth is dominated by SiH 3 and in which ion bombardment is absent.…”

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confidence: 99%

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

Smets

Kessels

Sanden

2003

Applied Physics Letters

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The scaling behavior of the surface morphology of hydrogenated amorphous silicon deposited from a SiH3 dominated plasma has been studied using atomic force microscopy and in situ ellipsometry. The observed substrate temperature dependence of growth exponent β reflects a crossover behavior from random deposition at 100 °C to a surface diffusion controlled smoothening around 250 °C to full surface relaxation around 500 °C. This crossover behavior has been reproduced by Monte Carlo simulations assuming a site dependent surface diffusion process, revealing an activation energy of ∼1.0 eV for the ruling surface smoothening mechanism. The implications for a-Si:H growth are discussed.

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Morphological study of kinetic roughening on amorphous and microcrystalline silicon surface

Cited by 46 publications

References 10 publications

Relationship between scaling behavior and porosity of plasma-depositedTiO2thin films

Relationship between scaling behavior and porosity of plasma-depositedTiO2thin films

Surface Smoothening Mechanism of Amorphous Silicon Thin Films

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

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