Morphological, structural and optical properties of thin SiC layer growth onto silicon by pulsed laser deposition

Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

“…Because of its wide band gap, high electron mobility and high thermal conductivity, crystalline SiC is of great importance in manufacturing electronic components and microelectro-mechanical systems (MEMS) [1][2][3][4][5][6]. SiC is also considered as an ideal protective coating for metallic components under severe working environment as a result of its high melting point, high oxidation resistance at high temperature and relatively low thermal coefficient of expansion.…”

“…Many parameters influence the pulsed laser deposition process that can be classified as (i) material related parameters (substrate's material, surface and properties), (ii) laser related parameters (wavelength, pulse energy, frequency and spot size), (iii) process related parameters (target-to-substrate distance, operating gas, background pressure and temperature) [3,6]. Previous works show that the pulse energy and frequency as well as substrate's temperature are the main parameters that influence the deposition process [1][2][3][4][5][6].…”

“…Previous works show that the pulse energy and frequency as well as substrate's temperature are the main parameters that influence the deposition process [1][2][3][4][5][6]. It also shows that substrate's temperature is the main factors that affect the crystallinity and nanostructure size of films.…”

“…It also shows that substrate's temperature is the main factors that affect the crystallinity and nanostructure size of films. Typically high temperature (>600 8C) is required to produce crystalline SiC thin films [1][2][3][4][5][6]. Furthermore, almost all reports that discuss PLD technique use relatively high energy density (!1 J/ cm 2 ) [1][2][3][4][5][6] without much emphasis on the mechanical properties of the deposited films.…”

Lézerrel kezelt szilícium felületek, valamint impulzuslézeres rétegépítéssel előállított amorf szilícium és SixC vékonyrétegek ellipszometriai vizsgálata

“…Hidrogén bevezetésével, hasonlóan az amorf szilíciumhoz, stabilizálni lehet a szerkezetet a logó kötések megkötésével [39]. SiC vékonyrétegeket készítettek PLD-vel is sztöchiometrikus SiC céltárgyak fűtött hordozóra való leválasztásával [35,36,[40][41][42][43][44][45][46]. A PLD-vel készített SiC rétegek előnye a sztöchiometrikus összetétel [36], ami a többi módszer esetében nem mindig teljesül.…”