Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon

Metaferia, Wondwosen; Junesand, Carl; Gau, Ming-Horng; Lo, Ikai; Pozina, Galia; Hultman, Lars; Lourdudoss, Sebastian

doi:10.1016/j.jcrysgro.2011.07.022

Cited by 16 publications

(11 citation statements)

References 28 publications

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“…On the other hand, faster coalescence implies higher lateral growth rate which could mean a higher faulting rate. In any case, since the morphology of the initial ELOG is very different depending on opening type as demonstrated in previous studies, 25 one would expect a larger influence of the opening type on the SF density if the formation mechanism was mainly random deposition errors particularly on {111} facets than what is currently observed.…”

Section: Deposition Errorsmentioning

confidence: 52%

“…Since there exists a one-to-one correspondence between black spots in the PCL map and TDs, 24 the analysis was performed assuming that each TD corresponds to a dark spot with a radius of ∼ 0.3 m, since this is the approximate minority carrier diffusion length. 25 …”

Section: Characterizationmentioning

confidence: 99%

“…8(b)) generally show broader peaks shifted to shorter wavelengths compared to undoped InP, which has a spectral wavelength of 877 nm at 80 K, thus indicating influence of the Burstein-Moss effect as described in our previous studies. 25 The adjusted band gap energy due to dopants is equal to: 33 …”

Section: Characterizationmentioning

confidence: 99%

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Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Junesand¹,

Gau²,

Sun³

et al. 2014

Mat Express

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Epitaxial lateral overgrowth of InP has been grown by hydride vapor phase epitaxy on Si substrates with a thin seed layer of InP masked with SiO 2 . Openings in the form of multiple parallel lines as well as mesh patterns from which growth occurred were etched in the SiO 2 mask and the effect of different growth conditions in terms of V/III ratio and growth temperature on defects such as threading dislocations and stacking faults in the grown layers was investigated. The samples were characterized by cathodoluminescence and by transmission electron microscopy. The results show that the cause for threading dislocations present in the overgrown layers is the formation of new dislocations, attributed to coalescence of merging growth fronts, possibly accompanied by the propagation of pre-existing dislocations through the mask openings. Stacking faults were also pre-existing in the seed layer and propagated to some extent, but the most important reason for stacking faults in the overgrown layers was concluded to be formation of new faults early during growth. The formation mechanism could not be unambiguously determined, but of several mechanisms considered, incorrect deposition due to distorted bonds along overgrowth island edges was found to be in best agreement with observations.

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Section: Deposition Errorsmentioning

confidence: 52%

Section: Characterizationmentioning

confidence: 99%

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Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Junesand¹,

Gau²,

Sun³

et al. 2014

Mat Express

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“…As the contrast is given by the integrated intensity, the PCL images do not provide information about the cause of the luminescence. In an earlier study, the room temperature CL spectra of the sulfurdoped ELOG InP layer from the stripe openings aligned at both 30 and 60 off [011] show a peak at 910 nm, 19,20 which has a blue shift with respect to the room temperature band to band transition energy of InP at 1.35 eV (918.5 nm). This could be due to the Burstein-Moss effect caused by the filling of the conduction band states arising from sulfur doping.…”

Section: A Morphology and Pcl Characterizationmentioning

confidence: 99%

“…Dislocations D2 and D3 originate from the defective interface between SiO 2 and the seed InP layer and propagate into the InP layer grown in the openings. The defective interface, absent on the surface of an unpolished seed layer, 19 can be caused by damage during CMP process. The opening area is devoid of such a defective interface, which could have been removed by chemical cleaning before epitaxial growth.…”

Section: B Xtem Characterizationmentioning

confidence: 99%

Optical and structural properties of sulfur-doped ELOG InP on Si

Sun

Junesand

Metaferia

et al. 2015

Journal of Applied Physics

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Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO2 mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

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Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics

Strömberg

Balaji

Srinivasan

et al. 2023

Physica Status Solidi (a)

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GaAsP/Si with high crystalline quality fabricated by cost-effective heteroepitaxial technology is a promising pathway for realizing low-cost Si-based tandem solar cell with efficiency higher than 30%. Herein, hydride vapor-phase epitaxy is used to perform selective area growth of GaAsP with high lateral coverage, referred to as epitaxial lateral overgrowth (ELOG). The ELOG is performed on GaAs-based substrates as a prestudy, followed by GaAs/Si and GaAsP/Si seed wafers employing chemical mechanical polishing to fabricate full 2 00 GaAsP/Si templates. These are subsequently used to grow and process GaAsP/Si pn-junction structures for electrical characterization. The ELOG GaAsP is studied by spatially resolved photoluminescence (PL) mapping and high-resolution X-ray diffraction measurements. PL analysis of the GaAsP/GaAs ELOG samples reveals an enhanced P-incorporation during lateral growth of GaAsP. This is also observed for the GaAsP/Si ELOG templates along with evidence of improved material quality, clearly distinguishing the laterally grown GaAsP from the planar growth directly above the Si substrate. Leakage pathways causing reduced electrical performance of the ELOG GaAsP/Si pn-junction structures are identified.

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Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon

Cited by 16 publications

References 28 publications

Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Optical and structural properties of sulfur-doped ELOG InP on Si

Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics

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