We present a novel, simple and low-cost protocol for fabricating pure Si, or Si1−xGex or Ge-based, sub-micrometric dielectric antennas with ensuing hybrid integration into different plastic supports. The dielectric antennas are realized exploiting the natural instability of thin solid films to form regular patterns of monocrystalline atomically smooth SiGe nanostructures that cannot be realized with conventional methods. By adjusting the annealing treatment and the semiconductor film thicknesses, different classes of nanoarchitectures can be formed, from elongated and periodic structures to disordered structures with a footprint of just a few tens of nm. This latter disordered case presents a significant suppression of the large-scale fluctuations that are conventionally observed in ordered systems and shows an almost hyperuniform behavior character.