More than 16% solar cells with a new 'HIT' (doped a-Si/nondoped a-Si/crystalline Si) structure

Wakisaka, Kenichiro; Taguchi, Mikio; Sawada, T.; Tanaka, Makoto; Matsuyama, T.; Matsuoka, T.; Tsuda, S.; Nakano, Satoshi; Kishi, Yasuo; Kuwano, Yukinori

doi:10.1109/pvsc.1991.169337

Cited by 28 publications

(15 citation statements)

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“…The carrier selection property of the amorphous/crystalline silicon (a-Si:H/c-Si) hetero-junction has been demonstrated for the first time more than three decades ago on npn bipolar junction transistors, which showed enhanced a-Si:H emitter efficiency and current gain [1,2]. Such a property has then been exploited later to reduce the dark current and increase the open circuit voltage (V OC ) of the a-Si:H/c-Si heterojunction solar (SHJ) cell [3,4]. Extensive research and development have been devoted to the design and technology of such a cell, especially p + doped a-Si:H(p + ) on n-type c-Si substrate, which led to a continuous improvement in the cell efficiency [5,6] to presently exceed 26% [7].…”

Section: Introductionmentioning

confidence: 99%

“…Several factors contribute to minimizing the emitter dark saturation current and hence to the V OC boost in the SHJ cell. Minimum interface recombination is ensured by inserting an ultrathin intrinsic a-Si:H(i) buffer layer between the a-Si:H(p + ) layer and the c-Si substrate [3,4]. In addition, band-gap narrowing in the heavily populated inversion layer is expected to be less significant than in doped layers.…”

Section: Introductionmentioning

confidence: 99%

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Electro-Physical Interpretation of the Degradation of the Fill Factor of Silicon Heterojunction Solar Cells Due to Incomplete Hole Collection at the a-Si:H/c-Si Thermionic Emission Barrier

Ghannam

Abdulraheem

2018

Applied Sciences

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An electro-physical interpretation for the degradation of the Fill Factor in p+/n silicon heterojunction solar cells (SHJ) due to incomplete hole collection at the thermionic emission barrier at the amorphous/crystalline silicon (a-Si:H/c-Si) hetero-interface is proposed supported by results of AFORS-HET device simulations. Under illumination, reflected holes at the thermionic barrier pile up at the hetero-interface which strengthens the dipole with the negative dopant ions in the doped a-Si:H(p+) layer and enhances the electric field passing through the a-Si:H layer. Such an enhanced electric field sweeps back the free holes spilling over in the intrinsic a-Si:H(i) layer from the a-Si:H(p+) layer considerably depleting the double a-Si:H layer and enhancing its resistance and the overall cell series resistance. Therefore, the degradation due to incomplete hole collection at the thermionic emission barrier under illumination can be assimilated to the effect of a series resistance does not affect the cell open circuit voltage but degrades only its fill factor. The resistance enhancement is found to be bias-dependent and to increase with decreasing the doping level in a-Si:H(p+). Predictions of the proposed model for different hole reflection probability at the barrier and for different thicknesses of the intrinsic a-Si:H(i) layer agree perfectly with the results of simulations.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electro-Physical Interpretation of the Degradation of the Fill Factor of Silicon Heterojunction Solar Cells Due to Incomplete Hole Collection at the a-Si:H/c-Si Thermionic Emission Barrier

Ghannam

Abdulraheem

2018

Applied Sciences

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“…In this study, the intrinsic a-Si:H layer in the front contact of a Heterojunction with Intrinsic Thin layer (HIT) solar cell is used as the high bandgap region housing the colloidal QDs that provide the intermediate band levels. HIT solar cells were introduced by Sanyo in 1991 [9] and are today a welldeveloped, high-efficiency industrial technology; used here as test devices to investigate the feasibility of including a planar CQD array, deposited by wet coating methods, in the middle of the cells growth process.…”

Section: Introductionmentioning

confidence: 99%

HIT intermediate-band solar cells with self-assembled colloidal quantum dots and metal nanoparticles

Tobias

Mendes

Boronat

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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Abstract-. The particular opto-electronic properties of chemically synthesized colloidal nanoparticles can be promising for functional materials, as those required for high efficient photovoltaic (PV) devices. In particular, appropriately-designed semiconductor colloids (quantum dots, QDs) can potentially allow sub-bandgap current generation in intermediate-band solar cells; while metal nanoparticles (MNPs) sustaining surface plasmons can provide both near and far-field light trapping to further boost the generated power. However, the incorporation of colloidal particles in inorganic PV materials is not trivial, therefore their implementation has so far been restricted to organic/polymeric based solar cells. In this work, PbS colloidal QDs have been incorporated in the intrinsic a-Si:H layer of HIT (substrate/a-Si:H hetero-junction) test structures. Both c-Si and GaAs substrates have been used, and in some cases colloidal Au NPs have also been included. The obtained devices are meant as probes to verify the feasibility of incorporating foreign nanoparticles in a cell structure and not as potentially efficient solar cells. Despite the radical novelties incorporated, the devices behaved similarly to the references, thus proving the compatibility of the proposed materials and processes.

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“…As conventional energy sources such as coal, oil, and natural gas are exhausted, solar energy is becoming increasingly crucial [1][2][3][4][5][6][7][8][9][10][11][12][13]. The combustion of fossil fuels produces carbon dioxide, which causes the greenhouse effect.…”

Section: Introductionmentioning

confidence: 99%

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Lin

You

et al. 2014

Energies

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Aluminum oxide (AlO x ) and plasma immersion ion implantation (PIII) were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlO x ) was deposited on the surface of a wafer; the electric field near the surface of wafer was enhanced; and the mobility of the carrier was improved; thus reducing carrier traps associated with dangling bonds. Using PIII enabled implanting nitrogen into the device to reduce dangling bonds and achieve the desired passivation effect. Depositing AlO x on the surface of a solar cell increased the short-circuit current density (J sc ); open-circuit voltage (V oc ); and conversion efficiency from 27.84 mA/cm 2 ; 0.52 V; and 8.97% to 29.34 mA/cm 2 ; 0.54 V; and 9.68%; respectively. After controlling the depth and concentration of nitrogen by modulating the PIII energy; the ideal PIII condition was determined to be 2 keV and 10 min. As a result; a 15.42% conversion efficiency was thus achieved; and the J sc ; V oc ; and fill factor were 37.78 mA/cm 2 ; 0.55 V; and 0.742; respectively.

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More than 16% solar cells with a new 'HIT' (doped a-Si/nondoped a-Si/crystalline Si) structure

Cited by 28 publications

References 1 publication

Electro-Physical Interpretation of the Degradation of the Fill Factor of Silicon Heterojunction Solar Cells Due to Incomplete Hole Collection at the a-Si:H/c-Si Thermionic Emission Barrier

Electro-Physical Interpretation of the Degradation of the Fill Factor of Silicon Heterojunction Solar Cells Due to Incomplete Hole Collection at the a-Si:H/c-Si Thermionic Emission Barrier

HIT intermediate-band solar cells with self-assembled colloidal quantum dots and metal nanoparticles

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

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