MoO x modified ITO/a-Si:H(p) contact for silicon heterojunction solar cell application

Shi, Jing; Shen, Lei; Liu, Yongwu; Yu, Jian; Liu, Jinning; Zhang, Liping; Liu, Yucheng; Bian, Jieyu; Liu, Zhengxin; Meng, Fanying

doi:10.1016/j.materresbull.2017.09.005

Cited by 23 publications

(14 citation statements)

References 28 publications

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“…Moreover, TMOs deposition can be carried out with simple and low-cost processes [15]. In fact, several groups devoted research works on TMOs-based solar cells [16][17][18][19][20][21][22][23][24][25] achieving conversion efficiency values up to 23.5% [26]. Interestingly, TMOs exhibit electronic properties favorable for electron transport as in case of zinc oxide (ZnO) [27] or titanium dioxide (TiO2) [28] and also for hole transport as in case of molybdenum trioxide (MoO3) [29], vanadium pentoxide (V2O5) [30] or tungsten trioxide (WO3) [21].…”

Section: Introductionmentioning

confidence: 99%

“…Interestingly, TMOs exhibit electronic properties favorable for electron transport as in case of zinc oxide (ZnO) [27] or titanium dioxide (TiO2) [28] and also for hole transport as in case of molybdenum trioxide (MoO3) [29], vanadium pentoxide (V2O5) [30] or tungsten trioxide (WO3) [21]. In particular, amorphous sub-stochiometric MoOx (x ~ 3) is the most common TMO for the hole selective contact [15][16][17][18][19][20]. This material presents good hole selectivity and its large energy gap (around 3 eV) allows optical gain respect to a standard a-Si:H(p) [19].…”

Section: Introductionmentioning

confidence: 99%

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Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

et al. 2020

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The application of molybdenum oxide in the photovoltaic field is gaining traction as this material can be deployed in doping-free heterojunction solar cells in the role of hole selective contact. For modeling-based optimization of such contact, knowledge of the molybdenum oxide defect density of states (DOS) is crucial. In this paper, we report a method to extract the defect density through nondestructive optical measures, including the contribution given by small polaron optical transitions. The presence of defects related to oxygen-vacancy and of polaron is supported by the results of our opto-electrical characterizations along with the evaluation of previous observations. As part of the study, molybdenum oxide samples have been evaluated after post-deposition thermal treatments. Quantitative results are in agreement with the result of density functional theory showing the presence of a defect band fixed at 1.1 eV below the conduction band edge of the oxide. Moreover, the distribution of defects is affected by post-deposition treatment.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

et al. 2020

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“…Although the effect of defect states within the MoO 3 band gap on device performance is generally poorly understood, it is believed that the hole selectivity of MoO 3 is due to defect bands near the CBM. , This likely means that defects that induce electronic states in the band gap nearer to the CBM, such as in Mn Mo × and Zn i × (but not Mn i × ), are of less concern or possibly even beneficial to device performance, whereas states closer to the VBM as produced by V Mo ′ , Cu i × , Mn i × , and Se i · will likely be detrimental because of an enhancement of carrier recombination.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Extrinsic Defects in Crystalline MoO₃: Solubility and Effect on the Electronic Structure

2018

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The effect of six potential contaminants (Cu, In, Ga, Se, Sn, and Zn) and five potential dopants (Ti, Mn, Sc, V, and Y) on the electronic and optical properties of molybdenum oxide (MoO 3 ) contact layers for solar cells was investigated using point defect analysis based on density functional theory simulations. Of the contaminants investigated, Sn, In, and Ga were found to be highly insoluble at all relevant temperatures and pressures and therefore not a concern for solar cell manufacturing. Zn, Cu, and Se exhibit some solubility, with the latter two appearing to introduce detrimental defect states near the valence band. This contamination can be avoided by increasing the O 2 partial pressure during MoO 3 deposition. Of the five potential aliovalent dopants, Sc, Ti, and Y were disregarded because of their limited solubility in MoO 3 , whereas V was found to be highly soluble and Mn somewhat soluble. The effect of Mn and V doping was shown to be strongly dependent on the O 2 partial pressure during deposition, with a high pO 2 favoring the formation of substitutional defects (potentially beneficial in the case of Mn doping because of the addition of defect states near the conduction band), whereas low pO 2 favoring interstitial defects.

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“…Simulation found that a high‐work‐function TCO is necessary at the TCO/p‐a‐Si:H interface for high‐quality passivation of the heterointerface. [ 16 ] An ultrathin MoO x buffer layer was inserted between p‐a‐Si:H and TCO films to gain over 1.5% in FF [ 17 ] . An indium tin oxide (ITO) and indium oxide (In 2 O 3 ) bilayer was applied as front electrode to gain over 1% relatively in FF due to the front contact modification of the thin In 2 O 3 layer.…”

Section: Introductionmentioning

confidence: 99%

Prolonged Annealing Improves Hole Transport of Silicon Heterojunction Solar Cells

Huang

Liu

et al. 2021

Physica Rapid Research Ltrs

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The Schottky barrier is a fundamental issue when an n‐type transparent conductive oxide (TCO) is contacted with p‐type hydrogenated amorphous silicon (p‐a‐Si:H) in silicon heterojunction (SHJ) solar cells. Herein, it is found that the hydrogen (H) atoms in p‐a‐Si:H diffuse into tungsten‐doped indium oxide (IWO) during annealing, which improves the electric properties of both the IWO films and the p‐a‐Si:H/IWO interface. H diffusion reduces the surface work function of p‐a‐Si:H, and thus reduces the Schottky barrier between the p‐a‐Si:H and the IWO. Consequently, it improves the hole transport of SHJ solar cells; i.e., both the fill factor (FF) and power conversion efficiency (PCE) substantially increase. These findings provide a new strategy to optimize the FF of SHJ solar cells.

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MoO x modified ITO/a-Si:H(p) contact for silicon heterojunction solar cell application

Cited by 23 publications

References 28 publications

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

Extrinsic Defects in Crystalline MoO₃: Solubility and Effect on the Electronic Structure

Prolonged Annealing Improves Hole Transport of Silicon Heterojunction Solar Cells

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MoO x modified ITO/a-Si:H(p) contact for silicon heterojunction solar cell application

Cited by 23 publications

References 28 publications

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

Extrinsic Defects in Crystalline MoO3: Solubility and Effect on the Electronic Structure

Prolonged Annealing Improves Hole Transport of Silicon Heterojunction Solar Cells

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Extrinsic Defects in Crystalline MoO₃: Solubility and Effect on the Electronic Structure