Monte Carlo study of the transient expansion of photogenerated plasmas in bulk semiconductors: Nonequilibrium phonon effects

Nonequilibrium phonon dynamics and electron distribution functions in InP and InAs

“…Since the original studies of picosecond Raman scattering in semiconductors, 1,2 it has become fairly well established that the cooling of the excited electron-hole plasma is dominated by the emission of optical phonons and that the deviation of the phonon population from equilibrium is quite important in determining the cooling time of the plasma. [3][4][5][6][7][8][9] Most of these studies have been carried out in the GaAs and/or Al 1Ϫx Ga x As system, and the dominant conclusion is that the cooling time of the hot electron-hole plasma is limited by the lifetime of the hot, nonequilibrium polar optical phonons in the system. Typically, this decay time is about 7 ps in bulk GaAs at Tϭ77 K. A buildup of the nonequilibrium phonons creates a ''bottleneck'' in which the carriers and the phonon population reach a common energy and reabsorption of the phonons slows the overall cooling process of the carriers.…”

Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p–i–n nanostructure under subpicosecond laser excitation

“…Details of the Monte Carlo simulation procedure and the material parameters used for the GaAs system can be found in previous work. [8][9][10] Briefly, three-valley electron and three-band hole models were used in the effective mass approximation for obtaining the scattering rates and determining the k-space distributions. Both the L and X valleys and the hole bands were assumed to be parabolic, while a simple nonparabolicity factor of 0.59 eV Ϫ1 was used for the ⌫ valley.…”