Ultrafast Phenomena in Semiconductors 2001
DOI: 10.1007/978-1-4613-0203-2_6
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Ensemble Monte Carlo Simulations of Ultrafast Phenomena in Semiconductors

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“…A lot of studies were devoted to the understanding of its electronic properties and to the simulation methods for semiconductor applications. Particular attention was paid by Monte Carlo techniques, which were already established for semiconductor devices [1,2,3], and above all by the correct inclusion of the Pauli exclusion principle in the standard Ensemble Monte Carlo approach [4], which in graphene is no longer negligible due to its high electronic degeneracy; a new Direct Simulation Monte Carlo scheme (DSMC) was developed in [5] while in the literature [6,7,8,9] it remained open a discussion about the classical liouvillian or quantum-like interpretation of the free flight step [10], whose study was addressed in [11].…”
Section: Introductionmentioning
confidence: 99%
“…A lot of studies were devoted to the understanding of its electronic properties and to the simulation methods for semiconductor applications. Particular attention was paid by Monte Carlo techniques, which were already established for semiconductor devices [1,2,3], and above all by the correct inclusion of the Pauli exclusion principle in the standard Ensemble Monte Carlo approach [4], which in graphene is no longer negligible due to its high electronic degeneracy; a new Direct Simulation Monte Carlo scheme (DSMC) was developed in [5] while in the literature [6,7,8,9] it remained open a discussion about the classical liouvillian or quantum-like interpretation of the free flight step [10], whose study was addressed in [11].…”
Section: Introductionmentioning
confidence: 99%