Monte Carlo simulation of transformations in SiC

Kabra, Vedant; Pandey, Dhananjai

doi:10.1080/01411598908245698

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…The calculated intensity distribution variation, representing the martensitic h.c.p. In order to investigate 2H single crystal of SiC, ZnS, Zn x Cd 1-x S and Zn x Mn 1-x S undergoing solid state transformation to 6H(33) structure, the diffraction theory of 2H to 6H transformation was developed, among others, by PANDEY (1980aPANDEY ( , 1980bPANDEY ( , 1980c, SEBASTIAN (1983SEBASTIAN ( ), (1987 and KABRA (1989). transformation by means of deformation SFs, according to our simplest Model 1 (R = 2), is depicted in Fig.…”

Section: Correlated Stacking Faultsmentioning

confidence: 99%

Investigation of One-Dimensionally Disordered Structures of AIIBVI Crystals by Monte Carlo Technique. II. 2H Structure with Different Kinds of Stacking Faults

Gosk

2001

Cryst. Res. Technol.

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Section: Correlated Stacking Faultsmentioning

confidence: 99%

Investigation of One-Dimensionally Disordered Structures of AIIBVI Crystals by Monte Carlo Technique. II. 2H Structure with Different Kinds of Stacking Faults

Gosk

2001

Cryst. Res. Technol.

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“…The diffraction intensity distributions from ODD structures can be easily calculated due to development of straightforward computer modelling technique [54][55][56]. The value of the technique in the calculations of diffraction intensity distributions from the disordered 3C and 2H structures and from the intermediate states of phase transitions, from parent 3C and 2H structures, was demonstrated in Part One and Part Two of this series [57,58].…”

Section: Introductionmentioning

confidence: 98%

Investigation of one‐dimensionally disordered structures of A^IIB^VI crystals by Monte Carlo technique III. 4H structure with different kinds of stacking faults

Gosk

2003

Cryst. Res. Technol.

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To investigate one-dimensionally disordered (ODD) structures in close packed (cp) crystals, the Monte Carlo computer simulation technique has been applied. Calculations of diffraction intensity distributions along the 10.L reciprocal lattice row from 4H structure with four different kinds of stacking faults (SFs): growth, deformation, layer displacement and extrinsic fault are presented. In particular, using simple frequency function of fault to fault distances, both random and non-random distributions of SFs are considered. Distinctive features of the diffraction patterns corresponding to the chosen examples of transformations from the parent 4H structure into another small-period polytypes are discussed in detail.

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“…In [49], it is observed that this model is realistic in situations when the faults arise during the layer-by-layer crystal growth. In the course of polytype phase transitions, the structure is gradually evolving over time.…”

Section: Simulation Of the Diffraction Patterns Based On The Models Omentioning

confidence: 99%

X-ray scattering on one-dimensional disordered structures

Cherepanova

2012

J Struct Chem

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The review shows different treatments and methods for the analysis of the X-ray diffraction patterns from the crystals disordered in one direction; the possibilities, limitations, and applications of each method are discussed. The author also provides the examples of simulation of the diffraction patterns for the crystals, which have the effects on the experimental X-ray patterns related with 1D disordering. Several structural types and different kinds of one-dimensional disorder are considered.

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Monte Carlo simulation of transformations in SiC

Cited by 12 publications

References 15 publications

Investigation of One-Dimensionally Disordered Structures of AIIBVI Crystals by Monte Carlo Technique. II. 2H Structure with Different Kinds of Stacking Faults

Investigation of One-Dimensionally Disordered Structures of AIIBVI Crystals by Monte Carlo Technique. II. 2H Structure with Different Kinds of Stacking Faults

Investigation of one‐dimensionally disordered structures of A^IIB^VI crystals by Monte Carlo technique III. 4H structure with different kinds of stacking faults

X-ray scattering on one-dimensional disordered structures

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Monte Carlo simulation of transformations in SiC

Cited by 12 publications

References 15 publications

Investigation of One-Dimensionally Disordered Structures of AIIBVI Crystals by Monte Carlo Technique. II. 2H Structure with Different Kinds of Stacking Faults

Investigation of One-Dimensionally Disordered Structures of AIIBVI Crystals by Monte Carlo Technique. II. 2H Structure with Different Kinds of Stacking Faults

Investigation of one‐dimensionally disordered structures of AIIBVI crystals by Monte Carlo technique III. 4H structure with different kinds of stacking faults

X-ray scattering on one-dimensional disordered structures

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Investigation of one‐dimensionally disordered structures of A^IIB^VI crystals by Monte Carlo technique III. 4H structure with different kinds of stacking faults