Monte Carlo simulation of real and reciprocal space transfer of electrons in a pseudomorphically strained GaAs/In0.15Ga0.85As/GaAs quantum well

Hoare, D.; Abram, R. A.; Kelsall, R. W.

doi:10.1016/0038-1101(95)00199-9

Cited by 4 publications

(8 citation statements)

References 23 publications

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“…The electron band structure is given by the analytical non-parabolic approximation shown in equation (6). The position of electrons in the z direction is determined by |F i,n (z)| 2 , in the manner described by Hoare et al [12].…”

Section: Monte Carlo Methodsmentioning

confidence: 99%

“…The reason is the GaAs X minima are higher in energy than the AlGaAs X minima, so the GaAs presents a barrier to AlGaAs in the X valley and hence the X electrons are unconfined. Whilst it is straightforward in principle to handle unconfined states [12], the bookkeeping load in keeping track of all possible allowed states is very heavy.…”

Section: Monte Carlo Methodsmentioning

confidence: 99%

“…where m * (K) is a K-dependent effective mass, which must be solved for using equations (3) and (4), and ε(K) is the eigenenergy obtain by solving equation (3). Such a calculation however, would demand large computing resources [10] since this would require the solution of equation (3) for each value of K. This problem has been addressed by several authors [11,12] who used the same effective mass throughout their structures and by Thobel et al [10] who used a weighted average of the barrier and quantum well effective masses. The term varying as K 2 is small in this case and can be neglected [17], although it would lead to a slight decrease in the effective conduction band offset with increasing K 2 [17].…”

Section: Self-consistent Calculations Of the Conduction Band Profilesmentioning

confidence: 99%

“…The random alloy scattering rate from the mth subband to the nth subband in the ith valley for alloy-disorder scattering is [9,12,26]…”

Section: Random Alloy Scatteringmentioning

confidence: 99%

“…There has been much previous work on Monte Carlo simulations of confined electrons in an applied field parallel to the interfaces between the well and barrier, for example in references [8][9][10][11][12][13][14][15]. Littlejohn and coworkers [15,16] looked at wells which were several hundred angstrom in width, where the electrons were assumed to have bulk wavefunctions and the effect of a uniform doping was mimicked by a transverse field with respect to the layer planes.…”

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Watling

Walker

Harris

et al. 1998

Semicond. Sci. Technol.

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Experimental measurements on III-V semiconductor structures in which a delta-doped plane has been placed inside a quantum well have shown good in-plane carrier velocity characteristics at high carrier concentrations; such structures have applications in power field effect transistors. To investigate the physics underlying the transport in these layered structures, we have obtained the velocity-field characteristics for the channel electrons with an ensemble Monte Carlo simulation that takes into account the confinement of the electrons within the quantum well. Our results compare well with experiment, especially given that there are no adjustable parameters. We show that high-field channel velocities v sat are much more affected by K-space transfer between and L valleys than by real-space transfer into the barrier material. The velocity-field curves are sensitive to the position of the delta-doped plane, for example the low-field mobility is lowered as the delta-doped plane approaches the centre of the quantum well because the overlap of the lowest subband electron wavefunction with the delta-doped plane is greatest. We have also suggested an explanation for a correlation between low-field mobility and saturation velocity deduced from experimental data.

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Section: Monte Carlo Methodsmentioning

confidence: 99%

Section: Monte Carlo Methodsmentioning

confidence: 99%

Section: Self-consistent Calculations Of the Conduction Band Profilesmentioning

confidence: 99%

“…The random alloy scattering rate from the mth subband to the nth subband in the ith valley for alloy-disorder scattering is [9,12,26]…”

Section: Random Alloy Scatteringmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Watling

Walker

Harris

et al. 1998

Semicond. Sci. Technol.

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Monte Carlo simulation of electron transport in delta-doped lattice-matched and strained-balanced InGaAs/InAlAs quantum wells

Watling

Walker

Harris

et al. 1999

Semicond. Sci. Technol.

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Strained-balanced In x Ga 1−x As/InAlAs quantum well structures have been shown to generate high carrier density, high-mobility layers suitable for power field effect transistor (FET) applications. Doped channel devices allow higher carrier densities than modulation-doped structures but with reduced carrier velocities due to increased ionized impurity scattering. The amount of ionized impurity scattering may be reduced by the introduction of compositional grading in In x Ga 1−x As quantum wells which results in an increasing depth of the quantum well on the opposite side to the delta-doped plane. The grading is achieved by the use of a number of steps, where each step has a fixed value of x. An ensemble Monte Carlo simulation has been used to calculate the velocity-field characteristics of the conduction electrons confined within the quantum well in such a structure. Here the envelope wavefunctions for the confined electrons are calculated using a self-consistent Poisson-Schrödinger solver. Our velocity-field characteristics show good agreement with experiment for the three-step structure but the agreement is noticeably worse for lattice-matched and five-step structures. We have shown that a correlation between the low-field mobility and saturation velocity observed experimentally for GaAs/AlGaAs and In x Ga 1−x As quantum wells and theoretically for GaAs/AlGaAs quantum wells is also valid for the predicted results in these structures. A similar explanation to that provided for the GaAs/AlGaAs quantum wells is shown to hold here.

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Hot carrier relaxation in quantum well structures using Monte Carlo simulation

Cassan

Galdin²,

Dollfus³

et al.

RADECS 97. Fourth European Conference on Radiation and Its Effects on Components and Systems (Cat. No.97TH8294)

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The relaxation process of high energy electrons, generated in the active layer of an ungraded separate-confinement heterostructure single quantum well laser diode by a radiative perturbation, is studied. Capture and escape are treated as mixed scattering events in a Monte Carlo simulation. The overlap integral between unconfined and confined states, used in the calculation of mixed scattering rates, is given. The beginning of the thermalization is very similar to the one in bulk material, but the weakness of the capture rate is responsible for a carrier bottleneck at the top of the well. The overall relaxation time appears very sensitive to detailed structure parameters, as the well thickness and the optical confinement layer width.

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Monte Carlo simulation of real and reciprocal space transfer of electrons in a pseudomorphically strained GaAs/In0.15Ga0.85As/GaAs quantum well

Cited by 4 publications

References 23 publications

Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells

Monte Carlo simulation of electron transport in delta-doped lattice-matched and strained-balanced InGaAs/InAlAs quantum wells

Hot carrier relaxation in quantum well structures using Monte Carlo simulation

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