Monte Carlo Simulation of InAlAs/InAlGaAs Tandem Avalanche Photodiodes

Sun, Wenlu; Zheng, Xiaoguang; Lu, Zhiwen; Campbell, Joe C.

doi:10.1109/jqe.2012.2187046

Cited by 30 publications

(19 citation statements)

References 14 publications

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“…The Monte Carlo tool that was used in this work is similar to the model in [8], [9], which is based on a physical-level description of carrier transport. The model uses a simplified non-parabolic band structure that includes the , L, and X valleys in the conduction band, and heavy-hole, light-hole, and split-off valence bands.…”

Section: Monte Carlo Simulationmentioning

confidence: 99%

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High-Gain InAs Avalanche Photodiodes

Sun

Zheng

et al. 2013

IEEE J. Quantum Electron.

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Section: Monte Carlo Simulationmentioning

confidence: 99%

“…Therefore, the measured 3 dB bandwidth of device is actually limited by carrier transit-time. Monte Carlo simulation using the method described in [8] was employed to verify the transit-time response. Impulse responses are plotted in Fig.…”

Section: Gain-bandwidth Productmentioning

confidence: 99%

High-Gain InAs Avalanche Photodiodes

Sun

Zheng

et al. 2013

IEEE J. Quantum Electron.

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“…The Monte Carlo simulation in this work is similar to the model in [2,3]. The scattering parameters were determined by simulating the p-i-n structures with different i-region thicknesses that are reported in Ref.…”

Section: Monte Carlo Simulation and Measurementmentioning

confidence: 99%

Charge-compensated high gain InAs avalanche photodiodes

Sun

Zheng

et al. 2012

IEEE Photonics Conference 2012

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We We We We report report report report an an an an InAs InAs InAs InAs avalanche avalanche avalanche avalanche photodiode photodiode photodiode photodiode with with with with graded graded graded graded p-doping p-doping p-doping p-doping to to to to compensate compensate compensate compensate the the the the n-type n-type n-type n-type background background background background doping doping doping doping in in in in the the the the depletion depletion depletion depletion region. region. region. region. The The The The measured measured measured measured gain, gain, gain, gain, excess excess excess excess noise, noise, noise, noise, and and and and bandwidth bandwidth bandwidth bandwidth are are are are consistent consistent consistent consistent with with with with Monte

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“…The need for high performance low noise optical detection in optical communication networks has demanded lowering APDs' excess (multiplication) noise that requires downscaling of APDs' multiplication regions [3,4]. Performance of a thin APD is limited by electrons/holes dead length, which covers a significant portion of its multiplication region width [5,6].…”

Section: Introductionmentioning

confidence: 99%