Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well

Kelsall, R. W.; Abram, R. A.; Batty, W.; O’Reilly, Eoin P.

doi:10.1088/0268-1242/7/1/015

Cited by 8 publications

(5 citation statements)

References 16 publications

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“…The calculated in-plane heavy hole effective mass is given to be around 0.125m 0 in a strained 9-nm In 0.18 Ga 0.82 As QW. 20 Thus we calculate the ground state exciton binding energy in structure S for an in-plane heavy hole mass of suggested 0.07, 12 0.1, and the upper bound of 0.22m 0 , which gives a difference of around 1 meV with respect to the value of 0.1m 0 used in this work ͑see Table I͒. To our knowledge there has been no calculations for InGaAs/GaAs coupled QW's with electric field. For coupled GaAs/AlGaAs QW's we have found two variational calculations of the ground-state exciton binding energy, 17,21 which, however, have not included parameters of structure B.…”

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confidence: 98%

Excitonic binding in coupled quantum wells

Szymańska¹,

Littlewood²

2003

Phys. Rev. B

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We study excitonic states in the presence of applied electric field in 8-nm GaAs coupled quantum wells ͑QW's͒ separated by a 4-nm Al 0.33 Ga 0.67 As barrier and in 6-nm In 0.1 Ga 0.9 As coupled QW's separated by a 4-nm GaAs barrier in which effects attributed to macroscopically ordered excitonic states have been recently reported. We discuss the differences in the nature of the states and in the origin of confinement which determines the change of excitonic properties with increase in the applied electric field in both structures. We have found that the indirect exciton binding energy for the field amplitude used in the experiment with InGaAs QW's is around 3.5 meV, much less than the previously reported 10 meV value. This suggests that the optically induced ring structure, reported to persist to near 100 K, might not be caused by collective excitonic transport.

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confidence: 98%

Excitonic binding in coupled quantum wells

Szymańska¹,

Littlewood²

2003

Phys. Rev. B

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“…aj (2) is the quantum well envelope function associated with the bulk Bloch periodic function I j ) , and the sum-Ezfiog and I :, -4) states. All generated band structures feature anticrossing, a consequence of subband mixing that m a r b the exchange in character of states in the two doubly degenerate bands as a result of subband mixing.…”

Section: Previous Simulations Of Ingaas Quantum Weus [4]mentioning

confidence: 99%

“…! oy scattering has been described assumin% a random alloy, in which the alloy scattering potential has the same symmetry as the lattice sites and a magnitude of A E = 0.267eV [2]. Scattering rates for all the processes are calculated from Fermi's Golden rule:…”

Section: Previous Simulations Of Ingaas Quantum Weus [4]mentioning

confidence: 99%

Monte Carlo simulations of low-field hole transport in strained InGaAs quantum wells

Crow¹,

Kelsall²,

Abram³

1993

Semicond. Sci. Technol.

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We report on Monte Carlo simulations of low-field hole transport at 77 K in InGaAs-AIGaAs quantum wells of different widths and alloy compositions. The valence subband structure is obtained using a k . p method within the infinite well approximation, which accounts for mixing between heavy and light hole states. The effects of alloy, impurfiy and phonon scattering are included in the transport simulations. Although the infinite well approximation is only expected to be reliable for barriers with an aluminium fraction greater than about 0.4. for which the heavy hole well is sufficiently deep, the resuits show good agreement with experimental measurements for a finite 90 8, Ino,,,G~,,,P.-GaAs quantum well. Astudy of hole transport in 908, In,Ga,-,& wells (0.10 < x < 0.25) predicts a mobility which increases with indium concentration since the reduction in the effective mass of the highest HHi valence subband due to strain more than compensates for the greater alloy scattering rate. An analysis of wells wah 18% indium content and widths in the range 50-1508, indicates a general increase in hole mobility with well width but with a local minimum around 908, due to intersubband scattering from the HHi subband to the heavier HHZ subband.

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“…In a recent paper [5], we reported o n the development of a Monte Carlo simulation of hole transport in an InGaAs/CaAs strained quantum well, using a k . p bdndstructure calculation to determine the subband energy dispersions and the hole-phonon scattering rates.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulations of field and carrier density dependent hole transport in an InGaAs/GaAs strained layer quantum well

Kelsall

Abram

1992

Semicond. Sci. Technol.

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We have carried out Monte Carlo simulations of hole transport in a range of InGaAsIGaAs strained quantum well structures. The simulations include phonon, impurity and alloy scattering, with rates obtained using k . p band structure. The simulations give good agreement with the experimentally determined magnitude and carrier density dependence nf the low field hole mobility, for samples with carrier densities p,<4.0 x 10" cm-2. Our results suggest that alloy scattering is primarily responsible for the low mobilities observed in these structures. At p,=4.0x 10" cm-* strong coupling of optical phonon and plasmon modes leads to enhanced scattering and consequent reduction of the hole drift velocitv. but in o u r current model this effect still does not fully account for the strong saturation of the drift velocity observed experimentally

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Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well

Cited by 8 publications

References 16 publications

Excitonic binding in coupled quantum wells

Excitonic binding in coupled quantum wells

Monte Carlo simulations of low-field hole transport in strained InGaAs quantum wells

Monte Carlo simulations of field and carrier density dependent hole transport in an InGaAs/GaAs strained layer quantum well

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