Monte Carlo Simulation of Energetic Ion Behavior in Amorphous Targets

Ishitani, Tohru; Shimase, Akira; Hosaka, Sumio

doi:10.1143/jjap.22.329

Cited by 25 publications

(2 citation statements)

References 18 publications

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“…The physical description of ion interactions and transport incorporated into IONiSE are based on the data analysis and procedures of Ziegler, Biersak and Littmark 1 as employed in the classic TRIM and SRIM simulations 2 and on work by Ishitani et al 18 and Mueller 19 . The generation of ion induced secondary electrons (iSE) was modeled in an analogous manner to that employed for electron excitation 3,4 .…”

Section: Modeling Ion Solid Interactions and Secondary Electron Produmentioning

confidence: 99%

Modeling for metrology with a helium beam

2008

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IONiSE is a Monte Carlo simulation which describes the interactions of 5-50 keV energy He+ ions with solids, and predicts the production of ion induced secondary electron (iSE) emission. Its use to determine the most probable implant depth, the maximum ion range, and the effect of straggle are presented. IONiSE has been used to numerically fit literature tabulations of iSE generation from five elements so as to derive excitation energy and mean free path parameters. By employing those parameters in IONiSE the topographic yield variation for iSE as a function of energy and the atomic number of the target has been predicted, and estimates of the individual secondary electron contributions from the incident and backscattered ions have been made. These simulations help to create a foundation for the application and the interpretation of iSE images for metrology. HELIUM ION MICROSCOPYThe recently developed Helium Ion Microscope (Zeiss SMT Company; Peabody, MA) is a scanning instrument capable of imaging using both the secondary electron and the backscattered ion signals generated by the beam. The subnanometer diameter, high brightness, probe produced by this tool, the limited depth of penetration of ions within a solid, and the efficiency with which ions generate secondary electrons, all indicate that the ion microscope could be a valuable new option for device metrology and review. However, for such applications to be successful an understanding of the principles of signal generation by low energy ions must be developed, and models must be constructed so that signal profiles can be analyzed and interpreted with the same rigor as those coming from a conventional scanning electron microscope. This paper describes a Monte Carlo simulation designed to investigate key properties of helium ion beam interactions with a solid and of the ion induced secondary electron (iSE) signals that are produced. Modeling Ion Solid Interactions and Secondary Electron ProductionThe results presented here were generated by the IONiSE ("Ion induced SE") program developed at The University of Tennessee. The physical description of ion interactions and transport incorporated into IONiSE are based on the data analysis and procedures of Ziegler, Biersak and Littmark 1 as employed in the classic TRIM and SRIM simulations 2 and on work by Ishitani et al. 18 and Mueller 19 . The generation of ion induced secondary electrons (iSE) was modeled in an analogous manner to that employed for electron excitation 3,4 . The stopping power (SP) of helium ions in the material of interest is calculated using modified versions of the TRIM algorithms and can be considered as the sum of two termsnuclear stopping power and electronic stopping power (Figure 1). The rate at which secondary electrons are produced by the incident ion has been shown to be proportional to the instantaneous electronic stopping power 5,6,9 , the constant of proportionality being an excitation energy 'ε'. The secondary electrons so generated are then considered to escape to the surface with...

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Section: Modeling Ion Solid Interactions and Secondary Electron Produmentioning

confidence: 99%

Modeling for metrology with a helium beam

2008

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“…A mass ratio of the strike to struck particles much governs the elastic scattering, as will be discussed further on. Both MC programs for electrons and ions employed here are based on a single scattering model proposed by Joy (1988), and by Ishitani et al (1983) and Ishitani and Kaga (1995), respectively. Only 50 trajectories are drawn for each plot in Figure 2 so as not to be heavily overlapped.…”

Section: Monte Carlo Simulations Of Electron and Ion Trajectoriesmentioning

confidence: 99%

Objective comparison of scanning ion and scanning electron microscope images

Ishitani

Tsuboi

1997

Scanning

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Summary:Common and different aspects of scanning electron microscope (SEM) and scanning ion microscope (SIM) images are discussed from a viewpoint of interaction between ion or electron beams and specimens. The SIM images [mostly using 30 keV Ga focused ion beam (FIB)] are sensitive to the sample surface as well as to low-voltage SEM images. Reasons for the SIM images as follows: (1) no backscatteredelectron excitation; (2) low yields of backscattered ions; and (3) short ion ranges of 20-40nm, being of the same order of escape depth of secondary electrons (SE) [=(3-5) times the SE mean free path]. Beam charging, channeling, contamination, and surface sputtering are also commented upon.

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Ranges

Eckstein¹

1991

Computer Simulation of Ion-Solid Interactions

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Monte Carlo Simulation of Energetic Ion Behavior in Amorphous Targets

Cited by 25 publications

References 18 publications

Modeling for metrology with a helium beam

Modeling for metrology with a helium beam

Objective comparison of scanning ion and scanning electron microscope images

Ranges

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