Monte Carlo calculations of electron transport in GaAs/AlGaAs superlattices

Artaki, M.; Hess, K.

doi:10.1016/s0749-6036(85)80020-3

Cited by 52 publications

(15 citation statements)

References 11 publications

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“…Results have been given in [107] for acoustic phonon scattering and in [108] for optical phonon and impurity scattering (using constant matrix elements). Modified scattering rates due to collisional broadening have been applied in [109] without significant changes in the result. Recently, extensive Monte-Carlo simulations [110,111,92] have been performed where both optical and acoustic phonon scattering as well as impurity scattering has been considered using the microscopic matrix elements.…”

Section: Results For Real Scattering Processesmentioning

confidence: 99%

Semiconductor superlattices: a model system for nonlinear transport

2002

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Electric transport in semiconductor superlattices is dominated by pronounced negative differential conductivity. In this report the standard transport theories for superlattices, i.e. miniband conduction, Wannier-Stark-hopping, and sequential tunneling, are reviewed in detail. Their relation to each other is clarified by a comparison with a quantum transport model based on nonequilibrium Green functions. It is demonstrated how the occurrence of negative differential conductivity causes inhomogeneous electric field distributions, yielding either a characteristic sawtooth shape of the current-voltage characteristic or self-sustained current oscillations. An additional ac-voltage in the THz range is included in the theory as well. The results display absolute negative conductance, photon-assisted tunneling, the possibility of gain, and a negative tunneling capacitance. 2 Notation and list of symbolsThroughout this work we consider a superlattice, which is grown in the z direction. Vectors within the (x, y) plane parallel to the interfaces are denoted by bold face letters k, r, while vectors in 3 dimensional space are r, k, . . . . All sums and integrals extend from −∞ to ∞ if not stated otherwise.The following relations are frequently used in this work and are given here for easy reference:

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Section: Results For Real Scattering Processesmentioning

confidence: 99%

Semiconductor superlattices: a model system for nonlinear transport

2002

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“…Since the early model suggested by Esaki and Tsu [1], many calculations have been carried out using Monte Carlo simulation [11][12][13], Boltzmann equation [7][8][9] and balance-equation methods [6]. The majority of these theoretical studies, however, were based on the assumption that carriers are moving within a single miniband.…”

Section: Introductionmentioning

confidence: 99%

“…We find that the chemical potential of the upper miniband is lower than that of the lower miniband, and this difference is enhanced with increasing field-strength. The total average velocity v d of the present two-miniband model, obtained from eqn (13), is shown in Fig. 2 as a function of the electric field E, together with the electron temperature T e .…”

Section: Introductionmentioning

confidence: 99%

Superlattice vertical transport with high-lying minibands

Lei

Lima

Troper

1998

Superlattices and Microstructures

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“…Theories of this phenomenon are mainly based on a semiclassical picture [1,2] or the Boltzmann equation approach [3,4]. These models, however, cannot account for the splitting of the SSL minibands into WannierStark ladders at large electric fields.…”

Section: Introductionmentioning

confidence: 99%