Superlattice vertical transport with high-lying minibands

Lei, X. L.; Lima, I. C. da Cunha; Troper, A.

doi:10.1006/spmi.1996.0299

Cited by 1 publication

(2 citation statements)

References 13 publications

(18 reference statements)

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“…The calculation is performed according to the Lei and Ting's 29 force and energy balance equation formalism which has been used successfully in several heterostructures of different dimensionality [30][31][32] both in the linear and in the non-linear regime. An advantage of this formalism is to provide a direct calculation of the self-averaged resistivity, instead of the conductivity.…”

Section: Resistivity Of the "Metallic" Channelmentioning

confidence: 99%

“…We assume quasi-two-dimensional carriers of density n * s (arial density) inside a layered semiconductor structure were impurities (scatterer centers) are located inside specific layers with a density n i . The calculation is performed according to the Lei and Ting's 29 force and energy balance equation formalism which has been used successfully in several heterostructures of different dimensionality [30][31][32] both in the linear and in the non-linear regime. An advantage of this formalism is to provide a direct calculation of the self-averaged resistivity, instead of the conductivity.…”

Section: Resistivity Of the "Metallic" Channelmentioning

confidence: 99%

See 1 more Smart Citation

A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers

Oliveira

Cabral

Boselli

et al. 2011

Journal of Applied Physics

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We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band determining the extended ("metallic" transport) or localized (hopping by thermal excitation) nature of the states at and near the Fermi level. Magnetic order and resistivity are inter-related due to the influence of the spin polarization of the impurity band and the effect of the Zeeman splitting on the mobility edge. We obtain, for a given range of Mn concentration and carrier density, a "metallic" behavior in which the transport by extended carriers dominates at low temperature, and is dominated by the thermally excited localized carriers near and above the transition temperature. This gives rise to a conspicuous hump of the resistivity which has been experimentally observed and brings light onto the relationship between transport and magnetic properties of this material.

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Section: Resistivity Of the "Metallic" Channelmentioning

confidence: 99%

Section: Resistivity Of the "Metallic" Channelmentioning

confidence: 99%