2004
DOI: 10.1117/12.534351
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Monte-Carlo-based analysis of local CD variation and application to establish realistic process and tool error budgets

Abstract: Local' critical dimension (CD) variations, defined in this paper as those that impact transistor gate lengths within a localized 2.5 mm X 2.5 mm area of a semiconductor device, are of most critical interest to circuit performance, as these errors determine critical path delays. However, these errors are difficult to quantify in the fab and historically have been neglected by the lithography community. We combine an empirically anchored response surface model with a Monte Carlo engine to examine in detail the v… Show more

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