Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

Zhang, Lilong; Wang, Ying; Guo, Haomin; Hu, Hesuan; Liu, Yuntao; Chen, Size

doi:10.1109/jsen.2021.3094803

Cited by 3 publications

(3 citation statements)

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“…The variable structural parameters of the SiC detector shown in Fig. 1 have been optimized in our previous work to achieve the maximum intrinsic detection efficiency [33], and the optimal SiC detector structure parameter configuration is shown in Table I.…”

Section: Ion Reaction and Modeling Methodology A Ion Producing Reactionsmentioning

confidence: 99%

“…From the previous discussion, it can be seen that 10 B has a higher probability of capturing thermal neutrons but produces lower secondary particle energy [35], so the 10 B-type SiC neutron detector has a smaller structure size parameter [9], [13], [32], [33], [37]. However, 6 LiF has a lower probability of capturing thermal neutrons but produces higher secondary particle energy [35], so the structure size parameter of 6 LiF type SiC neutron detectors is larger [9], [13], [32], [33], [37]. If 10 B is backfilled into a trench with a width of T B , and 6 LiF is backfilled into a trench with a width of T LiF , the properties of 10 B and 6 LiF to react with thermal neutrons can be fully utilized.…”

Section: Double-trench Sic Neutron Detector a Double-trench Detector ...mentioning

confidence: 99%

“…From the previous work of [33], the optimal conversion layer thickness of 6 LiF thin-film-coated SiC neutron detector is 25 µm, for consistency, we also set the trench depth H of the trench-type SiC neutron detector to 25 µm. The variation of intrinsic detection efficiency with LLD for three SiC neutron detectors (thin-film-coated type, single trench type, and double trench type) with optimal structural parameters is shown in Fig.…”

Section: A Comparative Analysis Of Detection Performancementioning

confidence: 99%

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Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

et al. 2023

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In this article, we propose a double-trenchtype silicon carbide (SiC) neutron detector and model it using the concept of a unit cell on the GEANT4 platform. When the low-level discriminator (LLD) value was fixed at 300 keV, the structural parameters of this double-trench-type SiC neutron detector were optimized to maximize the intrinsic detection efficiency. Compared with the single trench type, the doubletrench-type SiC neutron detector can significantly improve the neutron intrinsic detection efficiency within a limited trench depth, which was especially suitable for the current technological status that SiC materials can only be used for shallow trench etching. Apart from optimizing the structural parameters, the energy deposition spectra in the SiC detector region by the generated secondary charged particles upon thermal neutron interaction in neutron conversion materials ( 10 B and 6 LiF) have also been estimated. It can be found that the double-trench-type SiC neutron detector counts significantly increased in the low-energy range, while the counts in the high-energy range are only slightly decreased. This is also the essential reason why the intrinsic detection efficiency of the double-trench-type SiC neutron detector was significantly improved compared to the single-trench-type SiC neutron detector.

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Section: Ion Reaction and Modeling Methodology A Ion Producing Reactionsmentioning

confidence: 99%

Section: Double-trench Sic Neutron Detector a Double-trench Detector ...mentioning

confidence: 99%

Section: A Comparative Analysis Of Detection Performancementioning

confidence: 99%

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Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

et al. 2023

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Gamma-radiation hardness and long-term stability of ALD-Al2O3 surface passivated Si

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Povoli

Koybasi

et al. 2023

Journal of Applied Physics

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Al2O3 has emerged as the surface passivation material of choice for p-type silicon in photovoltaics and has also become a candidate for passivating Si-based radiation sensors. However, the surface passivation of Al2O3 has been shown to degrade when exposed to gamma-radiation, making it of interest to determine methods of depositing Al2O3 that minimize the radiation-induced degradation on the surface passivation. In this study, we investigate the long-term stability and gamma-radiation hardness of Al2O3 prepared using the TMA+H2O+O3 precursor combination and how the pretreatment, the deposition temperature, and the film thickness affect the density of interface states, Dit, and fixed oxide charge, Qfix, before and after gamma-irradiation. We find that the surface saturation current density, J0s, of silicon passivated by Al2O3 increases after annealing but stabilizes over time depending on the Al2O3 thickness. Samples with thicknesses of <20 nm stabilize within hours, while those with >60 nm stabilize over days. J0s stabilizes at lower values with increased Al2O3 thickness. After exposure to 1 Mrad gamma-radiation, the samples still exhibit low Dit and high Qfix, with the best performing sample having a Dit of 1.5 × 1010 eV−1 cm−2 and a Qfix of −3.1 × 1012 cm−2. The deposition temperature appears to indirectly affect radiation hardness, owing to its impact on the hydrogen concentration in the film and at the Si–SiOx–Al2O3 interface. Lifetime measurements after irradiation indicate that Al2O3 still passivates the surface effectively. The carrier lifetime and Qfix can largely be recovered by annealing samples in O2 at 435 °C.

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Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD

et al. 2022

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Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

Cited by 3 publications

References 50 publications

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Gamma-radiation hardness and long-term stability of ALD-Al2O3 surface passivated Si

Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD

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