Monte Carlo analysis of noise spectra in self-switching nanodiodes

Íñiguez-de-la-Torre, I.; Matéos, J.; Pardo, D.; González, T.

doi:10.1063/1.2832505

Cited by 29 publications

(31 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…27 As a result, the channel current would be enhanced at low temperature. Note that the I-V characteristic of the simulated is not precisely consistent with the measured results for two reasons: (1) the surface charge density 24 is difficult to measurement and could be set by experience approximately; (2) the model is itself based on some simplifying assumptions 25 mentioned previously. These factors may be account for the discrepancy between the simulation and the experiment.…”

Section: Resultsmentioning

confidence: 96%

See 1 more Smart Citation

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

et al. 2015

View full text Add to dashboard Cite

We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-channel structure will provide high photocurrent gain. Simulation has been done to optimize the structure, explain the working principle and electrical properties of the devices. The nonlinear current-voltage characteristics have been demonstrated at different temperatures. The responsivity of the device is proven to be more than 4.8 × 106A/W at 50 K.

show abstract

Section: Resultsmentioning

confidence: 96%

“…The electrical MC simulations [23][24][25] of the device had shown that the rectifying characteristics of the device can be realized. The main simulated current-voltage (I-V ) results of device are illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

et al. 2015

View full text Add to dashboard Cite

show abstract

“…MC models have been proved to be quite useful for the analysis of the static, dynamic and noise behavior of SSDs [8,[11][12][13]. In this work we will analyze the high-frequency behavior of SSDs operating as detectors by means of MC simulations.…”

mentioning

confidence: 99%

Enhanced Terahertz detection in self‐switching diodes

Íñiguez-de-la-Torre

Matéos

Pardo

et al. 2009

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

SUMMARYIn this work, by means of Monte Carlo simulations, we analyze the presence of a resonance in the DC current response of an asymmetric nonlinear nanodiode (called self-switching diode) to AC voltage excitations in the Terahertz range. The phenomenon, which takes place at room temperature, can be enhanced and tuned by the geometry of the device, being potentially useful for selective Terahertz detection. The resonance is linked to a noise mechanism: collective charge fluctuations in the space-charge region around the active channel of the device, which are visible both in noise and rectification. The enhancement of the DC current is attributed to the phase shift between the applied signal and the response of the charge around the channel near the vertical trenches, which controls the electron flow through the diode.

show abstract

“…This noise process has been identified as the dominating process for unbiased selfswitching nanochannels. [31][32][33] A first estimation of the noise-equivalent power (NEP) expected from these devices can be obtained by using the equation: 6 …”

Section: B Diode-like Behavior and DC Power Generationmentioning

confidence: 99%

Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes

et al. 2015

View full text Add to dashboard Cite

In this letter, self-switching nanochannels have been proposed as an enabling technology for energy gathering in the terahertz (THz) regime. Such devices combine their diode-like behavior and high-speed of operation in order to generate DC electrical power from high-frequency signals. By using finite-element simulations, we have improved the sensitivity of L-shaped and V-shaped nanochannels based on InAlAs/InGaAs samples. Since those devices combine geometrical effects with their rectifying properties at zero-bias, we have improved their performance by optimizing their shape. Results show nominal sensitivities at zero-bias in the order of 40 V−1 and 20 V−1, attractive values for harvesting applications with square-law rectifiers.

show abstract

Monte Carlo analysis of noise spectra in self-switching nanodiodes

Cited by 29 publications

References 15 publications

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

Enhanced Terahertz detection in self‐switching diodes

Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes

Contact Info

Product

Resources

About