Monotellurure de gallium, GaTe

Julien‐Pouzol, M.; Jaulmes, S.; Guittard, M.; Alapini, F.

doi:10.1107/s0567740879010803

Cited by 92 publications

(43 citation statements)

References 4 publications

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“…GaTe presents a layered and highly anisotropic structure, with a monoclinic primitive cell composed of 6 Ga-Te units. 22 Brillouin zone (BZ) sampling was performed using the tetrahedron method with 88 irreducible points in the primitive cell (7 × 7 × 6 sampling). Our tests indicated that after full atomic and volumetric relaxations, the LDA reproduces the measured crystal structure, including the interlayer spacing, associated to the lattice vector c indicated in table I with errors of less than 3%.…”

Section: Calculation Detailsmentioning

confidence: 99%

Ab initioguided optimization of GaTe for radiation detection applications

Leão

Lordi

2011

Phys. Rev. B

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The development of semiconductor-based radiation detectors that display high energy resolution while operating at room temperature is a pressing need for both scientific applications as well as homeland security. Practice has proven that the real performance of materials in such applications is often hindered by intrinsic defects and accidental impurities. Experimental efforts to improve the properties of such materials are both time consuming and costly, since they rely largely on trial and error. In this paper, the properties of gallium telluride (GaTe)-a high Z, moderate band gap semiconductor-are investigated for room-temperature radiation detection applications. Systematic theoretical modeling based on density functional theory calculations is used to suggest experimental processes to grow this semiconductor with optimal properties, by judiciously identifying the most detrimental native defects and devising ways to minimize their occurrence as well as compensating their electronic impact on the crystal. The analysis suggests that material grown Ga-rich would have significantly higher resistivity, carrier mobilities, and carrier lifetimes compared to Te-rich material. In addition, Ge doping and In doping can be effective for carrier compensation of the material. Doping with Ge can be especially effective, if the ambipolar nature of substitutional incorporation on both Ga and Te sites is exploited.

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Section: Calculation Detailsmentioning

confidence: 99%

Ab initioguided optimization of GaTe for radiation detection applications

Leão

Lordi

2011

Phys. Rev. B

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“…The geometry of K (5) and K (7) is best described as a severely distorted square pyramid. The atoms K(1), K(6), K (12), and K(13) are six-coordinate with distorted octahedral coordination geometry, with K(1) and K(13) each having one longer contact to an arsenic atom. Other six-coordinate potassium atoms are K(9), K(10), K (14), and K (17) which are coordinated by the arsenic atoms to give distorted trigonal prisms.…”

Section: Crystal Structuresmentioning

confidence: 99%

New Layered Materials in the K–In–Ge–As System: K8In8Ge5As17and K5In5Ge5As14

Shreeve‐Keyer¹,

Haushalter²,

Lee

et al. 1997

Journal of Solid State Chemistry

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“…Each primitive cell contains 6 molecules and the unit cell contains 12 molecules and 108 valence electrons. 1,2 While other III-VI semiconductors crystallize in a four-sheet intralayer stacking pattern and all the Ga-Ga bonds are perpendicular to the layer plane, GaTe has only two thirds of the Ga-Ga bonds perpendicular to the layer planes while the others lie in the layer plane. 3 These bonds form chains of twofold rotational symmetry inside the layers along the twofold rotational symmetry axis 1 and the optical and crystallographic properties are different with regard to the other III-VI compounds.…”

Section: Introductionmentioning

confidence: 99%

Recombination processes in unintentionally doped GaTe single crystals

Zubiaga

Garcı́a

Plazaola

et al. 2002

Journal of Applied Physics

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Emission spectra of GaTe single crystals in the range of 1.90-1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14Ϯ1 meV. A value of 1.796Ϯ0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18Ϯ0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and defects was analyzed. The results obtained show the existence of two acceptor levels with ionization energies of 110Ϯ5 and 150Ϯ5 meV, respectively, and one donor level with an ionization energy of 75Ϯ5 meV. The study of chemical composition by inductively coupled plasma-optical emission spectroscopy and x-ray energy dispersion spectroscopy shows the existence of Na, Li, and Si. Sodium and lithium impurities could be associated with acceptor levels at gallium substitutional sites, and silicon ones with a donor level at Ga sites, whose vacancies can also be involved in these electronic levels.

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Monotellurure de gallium, GaTe

Cited by 92 publications

References 4 publications

Ab initioguided optimization of GaTe for radiation detection applications

Ab initioguided optimization of GaTe for radiation detection applications

New Layered Materials in the K–In–Ge–As System: K8In8Ge5As17and K5In5Ge5As14

Recombination processes in unintentionally doped GaTe single crystals

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