Monophase γ-In2Se3 thin film deposited by magnetron radio-frequency sputtering

Low-Dimensional In2Se3Compounds: From Material Preparations to Device Applications

“…Up to now, using this method only, γ-In 2 Se 3 was prepared in the In 2 Se 3 family. ,− In the preparation of γ-In 2 Se 3 nanofilms on n-Si(100) by RF magnetron sputtering, a highly pure In 2 Se 3 ceramic target served as the cathode . The base pressure was evacuated to 1.9 × 10 –4 Pa; then the working gas (99.99% Ar gas) was passed through sputtering chamber at a flow rate of 20 sccm and the pressure of deposition was kept at 0.5 Pa; the sputtering power was set to 80 W; the substrate temperature was at 360 °C; and the distance of the substrate to target was tuned to 5 cm.…”

“…Up to now, high-quality α-, β-, and γ-In 2 Se 3 films are prepared by vapor-phase growing method. In CVD, the growth temperature is varied for different substrates, and the growth temperature of α-In 2 Se 3 is higher than that of β- and γ-In 2 Se 3 ; Se and In 2 O 3 powders are commonly used as precursors. ,, The growth temperature of PVD is similar to that of CVD, but the precursor in PVD is usually In 2 Se 3 or InSe. ,,,,, Using magnetron sputtering, γ-In 2 Se 3 is usually prepared. ,− Using PLD, the preparation of α-, β- and γ-In 2 Se 3 films can be achieved. ,, However, PLD has relatively large impact and damage to the interface of films because of its high pulse energy, compared to MBE which uses thermally evaporated particles to grow. For MBE, the substrate surface, substrate temperature, and flux ratio of Se to In sources heavily affect the α-In 2 Se 3 formation.…”

Recent Progress of Two-Dimensional Materials for Ultrafast Photonics

“…Then, the splashed material reacts with the material in the gas to obtain 2D materials on the substrate. MSD has a high deposition rate and low growth temperature, in which the deposition rate can be controlled by adjusting the effect of the radio-frequency (RF) power [ 150 ]. Li et al prepared polycrystalline indium selenide (In Se ) thin films by MSD at 270 and 380 °C, as well as found a linear relationship between the deposition rate and effect of RF power where the fastest speed could reach 121.7 nm/min.…”

Photoelectrochemical properties of In2Se3 thin films: Effect of substrate temperature

“…In 2 Se 3 exhibits at least three different crystalline modifications denoted as α, β and γ with transition temperatures of 200 and 650°C, respectively for α → β and β → γ transition [16][17]. Indium chalcogenide thin films can be prepared by using various deposition techniques like chemical bath deposition [18][19], sputtering [20][21][22], solvothermal method [23], MOCVD [24] electrochemical technique [25], electrodeposition [26,27] and spray pyrolysis technique [28][29] etc. Yong Yan et al [20][21][22] have deposited In 2 Se 3 films by magnetron radio-frequency (RF) sputtering technique and subsequently analyzed these films by various characterization techniques.…”