2015
DOI: 10.7567/jjap.54.04dg01
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Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

Abstract: A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6–7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/… Show more

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Cited by 6 publications
(5 citation statements)
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References 34 publications
(39 reference statements)
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“…The characteristics of the O-band monolithic QD-OGM=SOA device were detailed in previous reports. 24,25) With this Oband QD-OGM=SOA, we achieved a large optical gain change of >6 dB using the QD-OGM section and effective compensation of the insertion loss using the QD-SOA section in the ultra-broadband O-band optical frequency range. A clear 10 Gbps eye opening and ∼7.0 Gbps high-speed errorfree data transmission were obtained by using the developed O-band monolithic QD-OGM=SOA device shown in Fig.…”
Section: Characterization Of O-band Monolithic Qd-ogm/ Soa Devicementioning
confidence: 96%
See 1 more Smart Citation
“…The characteristics of the O-band monolithic QD-OGM=SOA device were detailed in previous reports. 24,25) With this Oband QD-OGM=SOA, we achieved a large optical gain change of >6 dB using the QD-OGM section and effective compensation of the insertion loss using the QD-SOA section in the ultra-broadband O-band optical frequency range. A clear 10 Gbps eye opening and ∼7.0 Gbps high-speed errorfree data transmission were obtained by using the developed O-band monolithic QD-OGM=SOA device shown in Fig.…”
Section: Characterization Of O-band Monolithic Qd-ogm/ Soa Devicementioning
confidence: 96%
“…23) We therefore focused on the development of a QD optical modulator and QD semiconductor optical amplifier (SOA) by using ultra-broadband QD optical gain media in the T+O-band. 24,25) In this paper, we first report the successful development of a monolithically integrated QD optical gain modulator (OGM) with a QD-SOA device for T-band Gbps-order high-speed optical signal generation. Additionally, we describe the optical data transmission that was performed using an O-band monolithic QD-OGM=SOA device in multiple wavelength channels generated by a QD optical frequency comb laser (QD-FCL) as a multiple-carrier light source.…”
Section: Introductionmentioning
confidence: 99%
“…However, due to the cost of producing high quality QDs, there is significant interest in increasing the efficiency of QD emission in devices and reducing the quantities required, while using the high brightness of QDs to reduce power requirements [2,4,5]. QD emission must be modulated for many applications, including telecommunications [6][7][8], displays [9], imaging [10], and quantum computing [11,12], with demonstrated QD modulation rates ranging from DC to GHz [12,13].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, QD optical gain media have been shown to possess various attractive characteristics, including ultra broad optical gain bandwidths, high-temperature device stability, multi wavelength lasing, and small linewidth enhancement factors. [3][4][5][6][7][8][9][10][11][12] Moreover, silicon photonic wire waveguides based on silicon-oninsulator structures provide promising platforms for highly integrated photonics devices. [13][14][15][16][17][18][19] In our previous report, 20) we proposed a wavelengthtunable laser diode combining QD and silicon photonics technologies and demonstrated wavelength-tuning operations over a 28.5 nm wavelength range.…”
Section: Introductionmentioning
confidence: 99%