Heterogeneous quantum dot/silicon photonics-based wavelength-tunable laser diode with a 44 nm wavelength-tuning range

Abstract

A heterogeneous wavelength-tunable laser diode combining quantum dot and silicon photonics technologies is proposed. A compact wavelength-tunable filter with two ring resonators was carefully designed and fabricated using silicon photonics technology. The tunable laser combining the wavelength-tunable filter and an optical amplifier, which includes InAs quantum dots, achieved a 44.0 nm wavelength-tuning range at around 1250 nm. The broadband optical gain of the quantum dot optical amplifier was effectively used by the optimized wavelength-tunable filter. This heterogeneous wavelength-tunable laser diode could become a breakthrough technology for high-capacity data transmission systems.

Laser Characteristic and Strain Distribution Dependence on Embedding Layer Thickness of Quantum Dots Laser Diodes Grown on InP(311)B Substrate

“…Therefore, this study also focused on QDs, employing the strain compensation technique, [ 25,26 ] which enables a highly stacked QD structure with more than 300 layers, [ 25 ] owing to the prevention of the degradation of the QD quality, and QD‐SOAs and QD‐LDs were successfully fabricated in the 1.55 μm band grown on an InP(311)B substrate. [ 27–31 ] Moreover, this study already demonstrated heterogeneous integrated devices, such as tunable LDs [ 32–34 ] and dual‐wavelength lasers, for the signal source in the access network that used radio over fiber technique, [ 35 ] with QD‐and Si photonics‐based PICs in the O‐band and 1 μm band (1.0−1.26 μm, which we call T‐band). [ 36 ] However, the threshold current of the fabricated QD‐LD was insufficient because the design of the device was not optimized.…”

Extremely stable temperature characteristics of 1550-nm band, p-doped, highly stacked quantum-dot laser diodes

“…Additionally, the increase in traffic in datacenters and access networks, including wireless links, is higher than in other networks. Therefore, to establish such ultra-fast and high-capacity photonic networks, compact and highly functional photonic integrated circuits such as those in monolithic [2][3][4][5][6][7][8] or heterogeneous [9][10][11][12][13][14][15][16][17] devices are desired. Moreover, characteristics such as low-cost, low-energy consumption and high-temperature stability are essential if the devices are to be integrated with large-scale integrated circuits (LSIs) and other electronic devices.…”

Dynamic characteristics of 20‐layer stacked QD‐SOA with strain compensation technique by ultrafast signals using optical frequency comb

“…In addition, the increase of communication traffic in access networks and datacenters is higher than in other networks. Compact and high functional photonic integrated circuits (PICs) with high stability of temperature, such as heterogeneous or monolithic integrated devices, are desired in the networks. In particular, a semiconductor optical amplifier (SOA) is a key device that functions as a gain medium and nonlinear element in PICs.…”

“…Hence, in that case, the QD-SOA is expected to be able to respond such ultrafast signals more clearly. 4 Conclusions In this article, we evaluated the static and dynamic characteristics of 20-layer stacked QD-SOAs grown on an InP(311)B substrate with the strain compensation technique by ultrafast signals using an optical frequency comb. The gain peak wavelength of the fabricated QD-SOA was 1520 nm.…”