Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate

Aldaz, Rafael I.; Wiemer, Michael; Miller, David A. B.; Harris, James S.

doi:10.1364/opex.12.003967

Cited by 22 publications

(9 citation statements)

References 6 publications

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“…Achieving lateral optical confinement could lead to smaller current apertures than ever before. The beam shape formed on the plane mirror in this type of cavity can be calculated using the following formula based on classical Gaussian optics 19 , where σ is the standard deviation of the Gaussian profile, n is the equivalent refractive index of the cavity medium, L is the cavity length, and R is the radius of curvature of the curved mirrors. Thus formula predict a beam waist can be controlled by L and R of a cavity.…”

Section: Introductionmentioning

confidence: 99%

Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror

Hamaguchi¹,

Tanaka²,

Mitomo³

et al. 2018

Sci Rep

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We demonstrate the lateral optical confinement of GaN-based vertical-cavity surface-emitting lasers (GaN-VCSELs) with a cavity containing a curved mirror that is formed monolithically on a GaN wafer. The output wavelength of the devices is 441–455 nm. The threshold current is 40 mA (Jth = 141 kA/cm2) under pulsed current injection (Wp = 100 ns; duty = 0.2%) at room temperature. We confirm the lateral optical confinement by recording near-field images and investigating the dependence of threshold current on aperture size. The beam profile can be fitted with a Gaussian having a theoretical standard deviation of σ = 0.723 µm, which is significantly smaller than previously reported values for GaN-VCSELs with plane mirrors. Lateral optical confinement with this structure theoretically allows aperture miniaturization to the diffraction limit, resulting in threshold currents far lower than sub-milliamperes. The proposed structure enabled GaN-based VCSELs to be constructed with cavities as long as 28.3 µm, which greatly simplifies the fabrication process owing to longitudinal mode spacings of less than a few nanometers and should help the implementation of these devices in practice.

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Section: Introductionmentioning

confidence: 99%

Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror

Hamaguchi¹,

Tanaka²,

Mitomo³

et al. 2018

Sci Rep

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“…The single-pulse laser ablation was carried out in c-Si and ChHG samples S with laser pulses of different energy Ep varying from 5 to 30 μJ at different positions   (± 400 μm) of the focal plane of the lens L relative to the surface of the sample S ( Fig.1a). Specific pulse energy was set by rotating the polarization plane of the laser beam with a /2 retardation plate placed before the Glan prism G. Apart from the angular position of the crystal axis of the 2 plate, the pulse total energy and energy distribution at the focal spot of the lens L (3.7×, 0.11 NA, F  3.4 cm), (so called Airy pattern, which is formed as a result of diffraction on the aperture A [17]) depend on the diameter D of the aperture A (varied from 1 to 3 mm) before the lens L. The radial intensity distribution I(r) in the Airy pattern is described by the square of the Bessel function of the first kind J1 as I(r)  (2J1(x)/x) 2 ,where x rD/F with D as the aperture diameter,  -wavelength, and F  3.4 cm -focal distance of the lens. The central part of the distribution I(r) between the first zeros of the Bessel function contains  95% of the total energy of the pulse.…”

Section: Resultsmentioning

confidence: 99%

“…They trap micro-particles, particularly biological cells, in focal spot area, increasing thereby the speed and performance of the relevant studies [1]. Microlaser resonators can be built using concave micromirrors [2], making them an important constituent of adaptive optics, telecom systems and matrix laser displays [3].…”

Section: Introductionmentioning

confidence: 99%

Optical Phenomena and Processes Induced by Ultrashort Light Pulses in Chalcogenide and Chalcohalide Glassy Semiconductors

Blonskyi¹,

Kadan²,

Rybak³

et al. 2017

J. Nano- Electron. Phys.

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Time-resolved microscopy study of ablation with femtosecond laser pulses in chalcohalide glass and crystal silicon is presented. The laser pulse energy is deposited into the near-surface layer due to twophoton absorption. The superheated liquid is ejected from the ablation spot under the action of supersonic blast wave. Glass-forming process in chalcohalide glass creates optically smooth spherical surface of the crater due to the action of surface tension forces. As a result, single laser pulse produces microlens, which can be transformed into micromirrors after metal sputtering. The fabricated microoptical elements demonstrate diffraction-limited performance.

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“…Much longer cavities may be reached in vertical extended−cavity surface−emitting lasers with monolithic integration of dielectric DBR micromirrors [48][49][50], how− ever, those devices are beyond the scope of the present paper.…”

Section: Diffraction Lossesmentioning

confidence: 99%

VCSEL structures used to suppress higher-order transverse modes

Nakwaski

2011

Opto-Electronics Review

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Currently unwanted excitation of higher-order transverse modes is the most serious drawback of vertical-cavity surface-emitting diode lasers (VCSELs) limiting their possible applications. In the present paper, various methods used to suppress those modes are described and their effectiveness is compared. It is well known that, because of a nearly uniform current injection into their active regions, small-aperture VCSELs without any modification offer quite high single-fundamental-mode (SFM) output. However, their series resistance is often too high, which aggravates their high-modulation performance. Similarly uniform current injection may be also achieved with the aid of a tunnelling junction. Generally, methods suppressing higher-order modes take advantage of higher optical gain within the central part of the active region, higher radiation losses outside this region and/or higher central mirror reflectivity. Currently, applications of a tunnel junction, an impurity-induced disordering or an inverted shallow surface relief seem to be the simplest and the most effective methods. The deep etched holey structure or the ARROW structure enable obtaining similar single-mode output powers but they may be used in special cases only because of their complex technology. Photonic crystals may probably enable more advanced mechanisms of suppressing higher-order modes in future because currently their application seems to be still far from being optimised.

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Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate

Cited by 22 publications

References 6 publications

Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror

Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror

Optical Phenomena and Processes Induced by Ultrashort Light Pulses in Chalcogenide and Chalcohalide Glassy Semiconductors

VCSEL structures used to suppress higher-order transverse modes

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